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Bulk electrical properties of rubrene single crystals: Measurements and analysis

  • D. Braga
  • , N. Battaglini
  • , A. Yassar
  • , G. Horowitz
  • , M. Campione
  • , A. Sassella
  • , A. Borghesi
  • Université Paris Diderot
  • Dipartimento di Scienza dei Materiali
  • University of Milano-Bicocca

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

42 Citations (Scopus)

Résumé

Rubrene single crystals with well-developed (100) faces extending along the [010] direction were equipped with two planar gold electrodes deposited under low thermal load on the same crystal surface. The current-voltage curves measured on crystals with various thicknesses were analyzed by means of the space-charge-limited current model. In all cases, the curves present a clear trap-filled transition that allows extracting the trap-free mobility along the b axis. Working in a gap-type geometry and by comparing the mobility calculated from the Geurst two-dimensional and Mott-Gurney three-dimensional models, a clear 2D to 3D transition is established for a thickness that roughly corresponds to half the distance between the two electrodes. Further quantitative analysis of the data with a differential method leads to the conclusion that charge-transport properties at room temperature are affected by a discrete trap level pointing at 0.48±0.02 eV above the valence band.

langue originaleAnglais
Numéro d'article115205
journalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Numéro de publication11
Les DOIs
étatPublié - 17 mars 2008
Modification externeOui

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