Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength

Chang Hyun Kim; Omid Yaghmazadeh; Denis Tondelier; Yong Bin Jeong; Yvan Bonnassieux; Gilles Horowitz

doi:10.1063/1.3574661

Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength

Chang Hyun Kim
, Omid Yaghmazadeh
, Denis Tondelier
, Yong Bin Jeong
, Yvan Bonnassieux
, Gilles Horowitz

Institut polytechnique de Paris
Université Paris Diderot

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

109 Citations (Scopus)

Résumé

The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.

langue originale	Anglais
Numéro d'article	083710
journal	Journal of Applied Physics
Volume	109
Numéro de publication	8
Les DOIs	https://doi.org/10.1063/1.3574661
état	Publié - 15 avr. 2011

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10.1063/1.3574661

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abstract = "The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.",

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AU - Kim, Chang Hyun

AU - Yaghmazadeh, Omid

AU - Tondelier, Denis

AU - Jeong, Yong Bin

AU - Bonnassieux, Yvan

AU - Horowitz, Gilles

PY - 2011/4/15

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N2 - The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.

AB - The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.

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DO - 10.1063/1.3574661

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength

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