Résumé
To demonstrate strong coupling regime for a single quantum dot inside an optical microcavity, large oscillator strength quantum dots are needed. We show that quantum dots formed by the interface fluctuations of a thin GaAs quantum well are ideal systems for this purpose since they can present an oscillator strength larger than 100. By inserting a GaAs QD inside a state of the art microdisk microcavity, we demonstrate the strong coupling regime with a Rabi splitting of 400 μeV.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 3879-3884 |
| Nombre de pages | 6 |
| journal | Physica Status Solidi (B) Basic Research |
| Volume | 243 |
| Numéro de publication | 15 |
| Les DOIs | |
| état | Publié - 1 déc. 2006 |
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