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Challenging the Electrodeposition of Multinary Semiconductor Compounds: Case of CuInSe

  • E. Chassaing
  • , O. Roussel
  • , O. Ramdani
  • , P. P. Grand
  • , B. Canava
  • , A. Etcheberry
  • , J. F. Guillemoles
  • , D. Lincot

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Résumé

The electrodeposition of multinary compounds is of key importance for future technologies. Cu-In-Se system represents a case example, with a great potential in the field of photovoltaics. At IRDEP we achieved efficiencies up to 11.5% based on electrodeposited Cu-In-Se material. In the present paper, nucleation and growth steps of CuInSe2 are studied by polarization, impedance spectroscopy and SEM. The bulk composition is measured by x-ray fluorescence. The chemical environment of Cu, Se and In and the surface composition are analysed by XPS. A quasi-instantaneous 3D nucleation is observed. Binary Cu-Se nuclei are first obtained, which induce the incorporation of indium leading to CuInSe2. With increasing growth, secondary phases and Se(0) are obtained. At the threshold of potential corresponding to indium incorporation, a blocking adsorbate is formed, which is reduced at higher cathodic overvoltage into Cu-In-Se compound. These results are discussed in terms of general behavior of multinary compound deposition.

langue originaleAnglais
titreECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
EditeurElectrochemical Society Inc.
Pages577-585
Nombre de pages9
Edition2
ISBN (Electronique)9781566775519
ISBN (imprimé)9781566775519
Les DOIs
étatPublié - 1 janv. 2007
Evénement46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, États-Unis
Durée: 6 mai 200710 mai 2007

Série de publications

NomECS Transactions
nombre2
Volume6
ISSN (imprimé)1938-5862
ISSN (Electronique)1938-6737

Une conférence

Une conférence46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Pays/TerritoireÉtats-Unis
La villeChicago, IL
période6/05/0710/05/07

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