Characterization of a nanopipe dislocation in GaN by means of HR-EBSD and field dislocation mechanics analysis

A nanopipe threading screw dislocation in a GaN layer is studied. A recently developed high-angular resolution electron backscatter diffraction technique, relying on a global image registration of Kikuchi patterns, is used to assess elastic strain and rotation fields in the defected area. The characterization is complemented with predictions from a piezoelectric field dislocation mechanics model of a threading screw dislocation line. In plane elastic fields are obtained at the free surface, which arise from the cancellation of the dislocation bulk shear stress field. The experimental and simulated long range fields agree qualitatively well and correspond to a screw dislocation with Burgers vector magnitude 3c = 1.56 nm.