Characterization of aluminium concentration in shallow quantum wells AlxGa1-xAs/GaAs types

Moncef Chaouache; R. Chtourou; F. F. Charfi; J. Yves Marzin; J. Bloch

doi:10.1016/S0038-1098(02)00598-7

Characterization of aluminium concentration in shallow quantum wells Al_xGa_1-xAs/GaAs types

Moncef Chaouache
, R. Chtourou
, F. F. Charfi
, J. Yves Marzin
, J. Bloch

École Polytechnique

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We report a reflectance study on series of shallow quantum wells GaAs/Al_xGa_1-xAs types with different aluminium concentration. The observed barrier exciton reflectance line shape depends strongly on the shift in aluminium concentration in the two barriers, with the appropriate choice of the cap layer thickness. This observation was based on the reflectivity line shape analysis of anti-Bragg structures.

langue originale	Anglais
Pages (de - à)	51-54
Nombre de pages	4
journal	Solid State Communications
Volume	125
Numéro de publication	1
Les DOIs	https://doi.org/10.1016/S0038-1098(02)00598-7
état	Publié - 1 janv. 2003

Accès au document

10.1016/S0038-1098(02)00598-7

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title = "Characterization of aluminium concentration in shallow quantum wells AlxGa1-xAs/GaAs types",

abstract = "We report a reflectance study on series of shallow quantum wells GaAs/AlxGa1-xAs types with different aluminium concentration. The observed barrier exciton reflectance line shape depends strongly on the shift in aluminium concentration in the two barriers, with the appropriate choice of the cap layer thickness. This observation was based on the reflectivity line shape analysis of anti-Bragg structures.",

keywords = "A. Quantum wells, A. Semiconductors, D. Optical properties, E. Light absorption and reflection",

author = "Moncef Chaouache and R. Chtourou and Charfi, \{F. F.\} and Marzin, \{J. Yves\} and J. Bloch",

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AU - Chaouache, Moncef

AU - Chtourou, R.

AU - Charfi, F. F.

AU - Marzin, J. Yves

AU - Bloch, J.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - We report a reflectance study on series of shallow quantum wells GaAs/AlxGa1-xAs types with different aluminium concentration. The observed barrier exciton reflectance line shape depends strongly on the shift in aluminium concentration in the two barriers, with the appropriate choice of the cap layer thickness. This observation was based on the reflectivity line shape analysis of anti-Bragg structures.

AB - We report a reflectance study on series of shallow quantum wells GaAs/AlxGa1-xAs types with different aluminium concentration. The observed barrier exciton reflectance line shape depends strongly on the shift in aluminium concentration in the two barriers, with the appropriate choice of the cap layer thickness. This observation was based on the reflectivity line shape analysis of anti-Bragg structures.

KW - A. Quantum wells

KW - A. Semiconductors

KW - D. Optical properties

KW - E. Light absorption and reflection

UR - https://www.scopus.com/pages/publications/0037213080

U2 - 10.1016/S0038-1098(02)00598-7

DO - 10.1016/S0038-1098(02)00598-7

M3 - Article

AN - SCOPUS:0037213080

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