Characterization of Cu(In,Ga)Se2 electrodeposited and co-evaporated devices by means of concentrated illumination

M. Paire; C. Jean; L. Lombez; T. Sidali; A. Duchatelet; E. Chassaing; G. Savidand; F. Donsanti; M. Jubault; S. Collin; J. L. Pelouard; D. Lincot; J. F. Guillemoles

doi:10.1109/JPHOTOV.2013.2293889

Characterization of Cu(In,Ga)Se₂ electrodeposited and co-evaporated devices by means of concentrated illumination

M. Paire
, C. Jean
, L. Lombez
, T. Sidali
, A. Duchatelet
, E. Chassaing
, G. Savidand
, F. Donsanti
, M. Jubault
, S. Collin
, J. L. Pelouard
, D. Lincot
, J. F. Guillemoles

Lamsid/EDF/R and D
CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

2 Citations (Scopus)

Résumé

We present a new Cu(In,Ga)Se₂ characterization tool: Cu(In,Ga)Se₂ microcells. By creating pixels on a Cu(In,Ga)Se ₂ substrate, we are able to test electrically different locations. Moreover, because of the reduced size of the cells, (5-to 500-μm wide), heat and spreading resistance losses are made negligible, which make high flux characterizations available. We analyze current-voltage curves under high concentration to gain insight in the physical properties of Cu(In,Ga)Se ₂ cells. From our analysis, Cu(In,Ga)Se ₂ electrodeposited absorbers present resistivity fluctuations that are much more important than co-evaporated ones. These absorbers, as they present more electronic defects, are also more affected by the V_oc increase under intense fluxes, and the efficiency gains can be very significant: up to 6% absolute efficiency points at less than 50 suns.

langue originale	Anglais
Numéro d'article	6695773
Pages (de - à)	693-696
Nombre de pages	4
journal	IEEE Journal of Photovoltaics
Volume	4
Numéro de publication	2
Les DOIs	https://doi.org/10.1109/JPHOTOV.2013.2293889
état	Publié - 1 mars 2014

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Accès au document

10.1109/JPHOTOV.2013.2293889

Contient cette citation

Paire, M., Jean, C., Lombez, L., Sidali, T., Duchatelet, A., Chassaing, E., Savidand, G., Donsanti, F., Jubault, M., Collin, S., Pelouard, J. L., Lincot, D., & Guillemoles, J. F. (2014). Characterization of Cu(In,Ga)Se₂ electrodeposited and co-evaporated devices by means of concentrated illumination. IEEE Journal of Photovoltaics, 4(2), 693-696. Article 6695773. https://doi.org/10.1109/JPHOTOV.2013.2293889

@article{47a0872c53514e2aa282465a08a52f06,

title = "Characterization of Cu(In,Ga)Se2 electrodeposited and co-evaporated devices by means of concentrated illumination",

abstract = "We present a new Cu(In,Ga)Se2 characterization tool: Cu(In,Ga)Se2 microcells. By creating pixels on a Cu(In,Ga)Se 2 substrate, we are able to test electrically different locations. Moreover, because of the reduced size of the cells, (5-to 500-μm wide), heat and spreading resistance losses are made negligible, which make high flux characterizations available. We analyze current-voltage curves under high concentration to gain insight in the physical properties of Cu(In,Ga)Se 2 cells. From our analysis, Cu(In,Ga)Se 2 electrodeposited absorbers present resistivity fluctuations that are much more important than co-evaporated ones. These absorbers, as they present more electronic defects, are also more affected by the Voc increase under intense fluxes, and the efficiency gains can be very significant: up to 6\% absolute efficiency points at less than 50 suns.",

keywords = "Current-voltage characteristics, photovoltaic cells",

author = "M. Paire and C. Jean and L. Lombez and T. Sidali and A. Duchatelet and E. Chassaing and G. Savidand and F. Donsanti and M. Jubault and S. Collin and Pelouard, \{J. L.\} and D. Lincot and Guillemoles, \{J. F.\}",

year = "2014",

month = mar,

day = "1",

doi = "10.1109/JPHOTOV.2013.2293889",

language = "English",

volume = "4",

pages = "693--696",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "2",

}

Paire, M, Jean, C, Lombez, L, Sidali, T, Duchatelet, A, Chassaing, E, Savidand, G, Donsanti, F, Jubault, M, Collin, S, Pelouard, JL, Lincot, D & Guillemoles, JF 2014, 'Characterization of Cu(In,Ga)Se₂ electrodeposited and co-evaporated devices by means of concentrated illumination', IEEE Journal of Photovoltaics, VOL. 4, Numéro 2, 6695773, p. 693-696. https://doi.org/10.1109/JPHOTOV.2013.2293889

TY - JOUR

T1 - Characterization of Cu(In,Ga)Se2 electrodeposited and co-evaporated devices by means of concentrated illumination

AU - Paire, M.

AU - Jean, C.

AU - Lombez, L.

AU - Sidali, T.

AU - Duchatelet, A.

AU - Chassaing, E.

AU - Savidand, G.

AU - Donsanti, F.

AU - Jubault, M.

AU - Collin, S.

AU - Pelouard, J. L.

AU - Lincot, D.

AU - Guillemoles, J. F.

PY - 2014/3/1

Y1 - 2014/3/1

N2 - We present a new Cu(In,Ga)Se2 characterization tool: Cu(In,Ga)Se2 microcells. By creating pixels on a Cu(In,Ga)Se 2 substrate, we are able to test electrically different locations. Moreover, because of the reduced size of the cells, (5-to 500-μm wide), heat and spreading resistance losses are made negligible, which make high flux characterizations available. We analyze current-voltage curves under high concentration to gain insight in the physical properties of Cu(In,Ga)Se 2 cells. From our analysis, Cu(In,Ga)Se 2 electrodeposited absorbers present resistivity fluctuations that are much more important than co-evaporated ones. These absorbers, as they present more electronic defects, are also more affected by the Voc increase under intense fluxes, and the efficiency gains can be very significant: up to 6% absolute efficiency points at less than 50 suns.

AB - We present a new Cu(In,Ga)Se2 characterization tool: Cu(In,Ga)Se2 microcells. By creating pixels on a Cu(In,Ga)Se 2 substrate, we are able to test electrically different locations. Moreover, because of the reduced size of the cells, (5-to 500-μm wide), heat and spreading resistance losses are made negligible, which make high flux characterizations available. We analyze current-voltage curves under high concentration to gain insight in the physical properties of Cu(In,Ga)Se 2 cells. From our analysis, Cu(In,Ga)Se 2 electrodeposited absorbers present resistivity fluctuations that are much more important than co-evaporated ones. These absorbers, as they present more electronic defects, are also more affected by the Voc increase under intense fluxes, and the efficiency gains can be very significant: up to 6% absolute efficiency points at less than 50 suns.

KW - Current-voltage characteristics

KW - photovoltaic cells

U2 - 10.1109/JPHOTOV.2013.2293889

DO - 10.1109/JPHOTOV.2013.2293889

M3 - Article

AN - SCOPUS:84897667400

SN - 2156-3381

VL - 4

SP - 693

EP - 696

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 2

M1 - 6695773