Characterization of microcrystalline silicon by high wavenumber Raman scattering

Erik V. Johnson; Laurent Kroely; Mario Moreno; Pere Roca I Cabarrocas

doi:10.1557/proc-1153-a16-06

Characterization of microcrystalline silicon by high wavenumber Raman scattering

Erik V. Johnson
, Laurent Kroely
, Mario Moreno
, Pere Roca I Cabarrocas

Institut polytechnique de Paris

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization of the material without generating a complete cell is thus a useful tool to determine said process window. Infrared absorption due to the various vibrational modes of the material has been used as a coarse tool towards this purpose, but the use of FTIR to perform this diagnosis limits the substrates upon which the analysis can be performed. We report on the use of high wave-number (1800-2200 cm^-1) Raman scattering to perform a similar role of telltale peak detection directly on solar cells and on substrates suitable for thin-film photovoltaics. We evaluate material grown from SiF₄ by RF-PECVD and from SiH₄ by Matrix Distributed Electron Cyclotron Resonance (MDECR-) PECVD.

langue originale	Anglais
titre	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
Editeur	Materials Research Society
Pages	319-324
Nombre de pages	6
ISBN (imprimé)	9781605111261
Les DOIs	https://doi.org/10.1557/proc-1153-a16-06
état	Publié - 1 janv. 2009
Evénement	2009 MRS Spring Meeting - San Francisco, CA, États-Unis Durée: 13 avr. 2009 → 17 avr. 2009

Série de publications

Nom	Materials Research Society Symposium Proceedings
Volume	1153
ISSN (imprimé)	0272-9172

Une conférence

Une conférence	2009 MRS Spring Meeting
Pays/Territoire	États-Unis
La ville	San Francisco, CA
période	13/04/09 → 17/04/09

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SDG 7 Énergie abordable et propre

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10.1557/proc-1153-a16-06

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Johnson, E. V., Kroely, L., Moreno, M., & Roca I Cabarrocas, P. (2009). Characterization of microcrystalline silicon by high wavenumber Raman scattering. Dans Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009 (p. 319-324). (Materials Research Society Symposium Proceedings; Vol 1153). Materials Research Society. https://doi.org/10.1557/proc-1153-a16-06

@inproceedings{251ec2b85ae74ea5b71792ba6a602ab4,

title = "Characterization of microcrystalline silicon by high wavenumber Raman scattering",

abstract = "One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization of the material without generating a complete cell is thus a useful tool to determine said process window. Infrared absorption due to the various vibrational modes of the material has been used as a coarse tool towards this purpose, but the use of FTIR to perform this diagnosis limits the substrates upon which the analysis can be performed. We report on the use of high wave-number (1800-2200 cm-1) Raman scattering to perform a similar role of telltale peak detection directly on solar cells and on substrates suitable for thin-film photovoltaics. We evaluate material grown from SiF4 by RF-PECVD and from SiH4 by Matrix Distributed Electron Cyclotron Resonance (MDECR-) PECVD.",

author = "Johnson, \{Erik V.\} and Laurent Kroely and Mario Moreno and \{Roca I Cabarrocas\}, Pere",

year = "2009",

month = jan,

day = "1",

doi = "10.1557/proc-1153-a16-06",

language = "English",

isbn = "9781605111261",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "319--324",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009",

note = "2009 MRS Spring Meeting ; Conference date: 13-04-2009 Through 17-04-2009",

}

Johnson, EV, Kroely, L, Moreno, M & Roca I Cabarrocas, P 2009, Characterization of microcrystalline silicon by high wavenumber Raman scattering. Dans Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Materials Research Society Symposium Proceedings, VOL. 1153, Materials Research Society, p. 319-324, 2009 MRS Spring Meeting, San Francisco, CA, États-Unis, 13/04/09. https://doi.org/10.1557/proc-1153-a16-06

Characterization of microcrystalline silicon by high wavenumber Raman scattering. / Johnson, Erik V.; Kroely, Laurent; Moreno, Mario et al.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Materials Research Society, 2009. p. 319-324 (Materials Research Society Symposium Proceedings; Vol 1153).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Characterization of microcrystalline silicon by high wavenumber Raman scattering

AU - Johnson, Erik V.

AU - Kroely, Laurent

AU - Moreno, Mario

AU - Roca I Cabarrocas, Pere

PY - 2009/1/1

Y1 - 2009/1/1

N2 - One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization of the material without generating a complete cell is thus a useful tool to determine said process window. Infrared absorption due to the various vibrational modes of the material has been used as a coarse tool towards this purpose, but the use of FTIR to perform this diagnosis limits the substrates upon which the analysis can be performed. We report on the use of high wave-number (1800-2200 cm-1) Raman scattering to perform a similar role of telltale peak detection directly on solar cells and on substrates suitable for thin-film photovoltaics. We evaluate material grown from SiF4 by RF-PECVD and from SiH4 by Matrix Distributed Electron Cyclotron Resonance (MDECR-) PECVD.

AB - One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization of the material without generating a complete cell is thus a useful tool to determine said process window. Infrared absorption due to the various vibrational modes of the material has been used as a coarse tool towards this purpose, but the use of FTIR to perform this diagnosis limits the substrates upon which the analysis can be performed. We report on the use of high wave-number (1800-2200 cm-1) Raman scattering to perform a similar role of telltale peak detection directly on solar cells and on substrates suitable for thin-film photovoltaics. We evaluate material grown from SiF4 by RF-PECVD and from SiH4 by Matrix Distributed Electron Cyclotron Resonance (MDECR-) PECVD.

UR - https://www.scopus.com/pages/publications/77951111951

U2 - 10.1557/proc-1153-a16-06

DO - 10.1557/proc-1153-a16-06

M3 - Conference contribution

AN - SCOPUS:77951111951

SN - 9781605111261

T3 - Materials Research Society Symposium Proceedings

SP - 319

EP - 324

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009

PB - Materials Research Society

T2 - 2009 MRS Spring Meeting

Y2 - 13 April 2009 through 17 April 2009

ER -

Characterization of microcrystalline silicon by high wavenumber Raman scattering

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