Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells

Fatemeh Zargar; Derese Desta; Sigurd Mertens; Melissa Van Landeghem; Sarallah Hamtaei; Jeroen Prooth; Julia Zillner; Javid Hajhemati; Mohammdhosein Safari; An Hardy; Philip Schulz; Erik Ahlswede; Bart Vermang; Koen Vandewal; Hans Gerd Boyen

doi:10.1021/acsaem.3c03086

Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells

Fatemeh Zargar
, Derese Desta
, Sigurd Mertens
, Melissa Van Landeghem
, Sarallah Hamtaei
, Jeroen Prooth
, Julia Zillner
, Javid Hajhemati
, Mohammdhosein Safari
, An Hardy
, Philip Schulz
, Erik Ahlswede
, Bart Vermang
, Koen Vandewal
, Hans Gerd Boyen

IMEC Division IMOMEC (Partner in Solliance)
EnergyVille
Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Tin-based perovskite solar cells (PSCs) are emerging as a more environmentally friendly alternative to traditional PSCs that typically contain toxic lead. In this work, we study the influence of the Sn-perovskite/fullerene interface on the open-circuit voltage (V_oc). When the fullerene derivative ICBA is used as the electron transport layer, the V_oc reaches 0.68 V, while the band gap of the Sn-perovskite is 1.44 eV, giving a voltage deficit of 0.76 V. Using PCBM as the electron transport layer, this deficit is 0.19 V higher. Herein, we identify through Fourier transform photocurrent spectroscopy and luminescence measurements that interfacial charge-transfer states at the Sn-perovskite/fullerene interface induce a nonradiative recombination channel. The energy of these states should be increased in order to mitigate voltage losses at the contacts.

langue originale	Anglais
Pages (de - à)	3618-3626
Nombre de pages	9
journal	ACS Applied Energy Materials
Volume	7
Numéro de publication	9
Les DOIs	https://doi.org/10.1021/acsaem.3c03086
état	Publié - 13 mai 2024

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10.1021/acsaem.3c03086

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Zargar, F., Desta, D., Mertens, S., Van Landeghem, M., Hamtaei, S., Prooth, J., Zillner, J., Hajhemati, J., Safari, M., Hardy, A., Schulz, P., Ahlswede, E., Vermang, B., Vandewal, K., & Boyen, H. G. (2024). Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells. ACS Applied Energy Materials, 7(9), 3618-3626. https://doi.org/10.1021/acsaem.3c03086

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title = "Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells",

abstract = "Tin-based perovskite solar cells (PSCs) are emerging as a more environmentally friendly alternative to traditional PSCs that typically contain toxic lead. In this work, we study the influence of the Sn-perovskite/fullerene interface on the open-circuit voltage (Voc). When the fullerene derivative ICBA is used as the electron transport layer, the Voc reaches 0.68 V, while the band gap of the Sn-perovskite is 1.44 eV, giving a voltage deficit of 0.76 V. Using PCBM as the electron transport layer, this deficit is 0.19 V higher. Herein, we identify through Fourier transform photocurrent spectroscopy and luminescence measurements that interfacial charge-transfer states at the Sn-perovskite/fullerene interface induce a nonradiative recombination channel. The energy of these states should be increased in order to mitigate voltage losses at the contacts.",

keywords = "Fourier transform photocurrent spectroscopy, PEAX additive, Sn-based perovskite solar cells, electroluminescence external quantum yield, photoluminescence quantum yield, photovoltage loss",

author = "Fatemeh Zargar and Derese Desta and Sigurd Mertens and \{Van Landeghem\}, Melissa and Sarallah Hamtaei and Jeroen Prooth and Julia Zillner and Javid Hajhemati and Mohammdhosein Safari and An Hardy and Philip Schulz and Erik Ahlswede and Bart Vermang and Koen Vandewal and Boyen, \{Hans Gerd\}",

note = "Publisher Copyright: {\textcopyright} 2024 American Chemical Society",

year = "2024",

month = may,

day = "13",

doi = "10.1021/acsaem.3c03086",

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journal = "ACS Applied Energy Materials",

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Zargar, F, Desta, D, Mertens, S, Van Landeghem, M, Hamtaei, S, Prooth, J, Zillner, J, Hajhemati, J, Safari, M, Hardy, A, Schulz, P, Ahlswede, E, Vermang, B, Vandewal, K & Boyen, HG 2024, 'Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells', ACS Applied Energy Materials, VOL. 7, Numéro 9, p. 3618-3626. https://doi.org/10.1021/acsaem.3c03086

TY - JOUR

T1 - Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells

AU - Zargar, Fatemeh

AU - Desta, Derese

AU - Mertens, Sigurd

AU - Van Landeghem, Melissa

AU - Hamtaei, Sarallah

AU - Prooth, Jeroen

AU - Zillner, Julia

AU - Hajhemati, Javid

AU - Safari, Mohammdhosein

AU - Hardy, An

AU - Schulz, Philip

AU - Ahlswede, Erik

AU - Vermang, Bart

AU - Vandewal, Koen

AU - Boyen, Hans Gerd

PY - 2024/5/13

Y1 - 2024/5/13

N2 - Tin-based perovskite solar cells (PSCs) are emerging as a more environmentally friendly alternative to traditional PSCs that typically contain toxic lead. In this work, we study the influence of the Sn-perovskite/fullerene interface on the open-circuit voltage (Voc). When the fullerene derivative ICBA is used as the electron transport layer, the Voc reaches 0.68 V, while the band gap of the Sn-perovskite is 1.44 eV, giving a voltage deficit of 0.76 V. Using PCBM as the electron transport layer, this deficit is 0.19 V higher. Herein, we identify through Fourier transform photocurrent spectroscopy and luminescence measurements that interfacial charge-transfer states at the Sn-perovskite/fullerene interface induce a nonradiative recombination channel. The energy of these states should be increased in order to mitigate voltage losses at the contacts.

AB - Tin-based perovskite solar cells (PSCs) are emerging as a more environmentally friendly alternative to traditional PSCs that typically contain toxic lead. In this work, we study the influence of the Sn-perovskite/fullerene interface on the open-circuit voltage (Voc). When the fullerene derivative ICBA is used as the electron transport layer, the Voc reaches 0.68 V, while the band gap of the Sn-perovskite is 1.44 eV, giving a voltage deficit of 0.76 V. Using PCBM as the electron transport layer, this deficit is 0.19 V higher. Herein, we identify through Fourier transform photocurrent spectroscopy and luminescence measurements that interfacial charge-transfer states at the Sn-perovskite/fullerene interface induce a nonradiative recombination channel. The energy of these states should be increased in order to mitigate voltage losses at the contacts.

KW - Fourier transform photocurrent spectroscopy

KW - PEAX additive

KW - Sn-based perovskite solar cells

KW - electroluminescence external quantum yield

KW - photoluminescence quantum yield

KW - photovoltage loss

UR - https://www.scopus.com/pages/publications/85191833816

U2 - 10.1021/acsaem.3c03086

DO - 10.1021/acsaem.3c03086

M3 - Article

AN - SCOPUS:85191833816

SN - 2574-0962

VL - 7

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EP - 3626

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 9

ER -

Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells

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