Chemical profile and magnetoresistance of Ga 1-xMn xAs/GaAs/AlAs/GaAs/Ga 1-xMn xAs tunnel junctions

R. Mattana; M. Elsen; J. M. George; H. Jaffrès; F. Nguyen Van Dau; A. Fert; M. F. Wyczisk; J. Olivier; P. Galtier; B. Lépine; A. Guivarc'h; G. Jézéquel

doi:10.1103/PhysRevB.71.075206

Chemical profile and magnetoresistance of Ga _1-xMn _xAs/GaAs/AlAs/GaAs/Ga _1-xMn _xAs tunnel junctions

R. Mattana
, M. Elsen
, J. M. George
, H. Jaffrès
, F. Nguyen Van Dau
, A. Fert
, M. F. Wyczisk
, J. Olivier
, P. Galtier
, B. Lépine
, A. Guivarc'h
, G. Jézéquel

U. Mixte de Phys. CNRS/THALES
Université Paris-Saclay
Thales Research & Technology
University of Rennes

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We have investigated the manganese diffusion depth and the tunneling magnetoresistance (TMR) properties in Ga _1-xMn _xAs/GaAs/ AlAs/GaAs/Ga ^1-xMn _xAs tunnel junctions. Auger electron spectroscopy and transmission electron microscopy analysis show that the Mn diffusion depth is less than 15 Å. TMR measurements have been performed on tunnel junctions where different GaAs spacer thicknesses are inserted between the Ga _1-xMn _xAs electrode and AlAs tunnel barrier. Our results suggest that the GaAs thickness plays a crucial role on the temperature dependence of the TMR.

langue originale	Anglais
Numéro d'article	075206
journal	Physical Review B - Condensed Matter and Materials Physics
Volume	71
Numéro de publication	7
Les DOIs	https://doi.org/10.1103/PhysRevB.71.075206
état	Publié - 1 févr. 2005
Modification externe	Oui

Accès au document

10.1103/PhysRevB.71.075206

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Contient cette citation

Mattana, R., Elsen, M., George, J. M., Jaffrès, H., Nguyen Van Dau, F., Fert, A., Wyczisk, M. F., Olivier, J., Galtier, P., Lépine, B., Guivarc'h, A., & Jézéquel, G. (2005). Chemical profile and magnetoresistance of Ga _1-xMn _xAs/GaAs/AlAs/GaAs/Ga _1-xMn _xAs tunnel junctions. Physical Review B - Condensed Matter and Materials Physics, 71(7), Article 075206. https://doi.org/10.1103/PhysRevB.71.075206

@article{8cb54d11da0342d8a7aedcc501e9f83f,

title = "Chemical profile and magnetoresistance of Ga 1-xMn xAs/GaAs/AlAs/GaAs/Ga 1-xMn xAs tunnel junctions",

abstract = "We have investigated the manganese diffusion depth and the tunneling magnetoresistance (TMR) properties in Ga 1-xMn xAs/GaAs/ AlAs/GaAs/Ga 1-xMn xAs tunnel junctions. Auger electron spectroscopy and transmission electron microscopy analysis show that the Mn diffusion depth is less than 15 {\AA}. TMR measurements have been performed on tunnel junctions where different GaAs spacer thicknesses are inserted between the Ga 1-xMn xAs electrode and AlAs tunnel barrier. Our results suggest that the GaAs thickness plays a crucial role on the temperature dependence of the TMR.",

author = "R. Mattana and M. Elsen and George, \{J. M.\} and H. Jaffr{\`e}s and \{Nguyen Van Dau\}, F. and A. Fert and Wyczisk, \{M. F.\} and J. Olivier and P. Galtier and B. L{\'e}pine and A. Guivarc'h and G. J{\'e}z{\'e}quel",

year = "2005",

month = feb,

day = "1",

doi = "10.1103/PhysRevB.71.075206",

language = "English",

volume = "71",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

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Mattana, R, Elsen, M, George, JM, Jaffrès, H, Nguyen Van Dau, F, Fert, A, Wyczisk, MF, Olivier, J, Galtier, P, Lépine, B, Guivarc'h, A & Jézéquel, G 2005, 'Chemical profile and magnetoresistance of Ga _1-xMn _xAs/GaAs/AlAs/GaAs/Ga _1-xMn _xAs tunnel junctions', Physical Review B - Condensed Matter and Materials Physics, VOL. 71, Numéro 7, 075206. https://doi.org/10.1103/PhysRevB.71.075206

TY - JOUR

T1 - Chemical profile and magnetoresistance of Ga 1-xMn xAs/GaAs/AlAs/GaAs/Ga 1-xMn xAs tunnel junctions

AU - Mattana, R.

AU - Elsen, M.

AU - George, J. M.

AU - Jaffrès, H.

AU - Nguyen Van Dau, F.

AU - Fert, A.

AU - Wyczisk, M. F.

AU - Olivier, J.

AU - Galtier, P.

AU - Lépine, B.

AU - Guivarc'h, A.

AU - Jézéquel, G.

PY - 2005/2/1

Y1 - 2005/2/1

N2 - We have investigated the manganese diffusion depth and the tunneling magnetoresistance (TMR) properties in Ga 1-xMn xAs/GaAs/ AlAs/GaAs/Ga 1-xMn xAs tunnel junctions. Auger electron spectroscopy and transmission electron microscopy analysis show that the Mn diffusion depth is less than 15 Å. TMR measurements have been performed on tunnel junctions where different GaAs spacer thicknesses are inserted between the Ga 1-xMn xAs electrode and AlAs tunnel barrier. Our results suggest that the GaAs thickness plays a crucial role on the temperature dependence of the TMR.

AB - We have investigated the manganese diffusion depth and the tunneling magnetoresistance (TMR) properties in Ga 1-xMn xAs/GaAs/ AlAs/GaAs/Ga 1-xMn xAs tunnel junctions. Auger electron spectroscopy and transmission electron microscopy analysis show that the Mn diffusion depth is less than 15 Å. TMR measurements have been performed on tunnel junctions where different GaAs spacer thicknesses are inserted between the Ga 1-xMn xAs electrode and AlAs tunnel barrier. Our results suggest that the GaAs thickness plays a crucial role on the temperature dependence of the TMR.

UR - https://www.scopus.com/pages/publications/20144378473

U2 - 10.1103/PhysRevB.71.075206

DO - 10.1103/PhysRevB.71.075206

M3 - Article

AN - SCOPUS:20144378473

SN - 1098-0121

VL - 71

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

M1 - 075206