Comparative study of patterned TiO2 and Al2O3 layers as passivated back-contact for ultra-thin Cu(In,Ga)Se2 solar cells

F. Mollica; J. Goffard; M. Jubault; F. Donsanti; S. Collin; A. Cattoni; L. Lombez; N. Naghavi

doi:10.1109/PVSC.2017.8366505

Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells

F. Mollica
, J. Goffard
, M. Jubault
, F. Donsanti
, S. Collin
, A. Cattoni
, L. Lombez
, N. Naghavi

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

In this work, a low cost passivated back-contact for ultra-thin Cu(In,Ga)Se₂-based (CIGS) solar cells to improve the carrier collection is developed. The current loss due to rear-interface recombination was first estimated with an accurate opto-electrical model. We compared the use of a sol-gel TiO₂ and an ALD-Al₂O₃ layer for the back-contact passivation. 400-420 nm CIGS cells were fabricated on the oxide/Mo substrate with point-contacts patterned by nanoimprint lithography. The use of a patterned-Mo/Al₂O₃ back-contact leads to an increase of the cell performance compared to the standard Mo back-contact. The passivation effect is discussed and is characterized by photoluminescence.

langue originale	Anglais
titre	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	1594-1597
Nombre de pages	4
ISBN (Electronique)	9781509056057
Les DOIs	https://doi.org/10.1109/PVSC.2017.8366505
état	Publié - 1 janv. 2017
Evénement	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, États-Unis Durée: 25 juin 2017 → 30 juin 2017

Série de publications

Nom	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Une conférence

Une conférence	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Pays/Territoire	États-Unis
La ville	Washington
période	25/06/17 → 30/06/17

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/PVSC.2017.8366505

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Lien vers la publication dans Scopus

Contient cette citation

Mollica, F., Goffard, J., Jubault, M., Donsanti, F., Collin, S., Cattoni, A., Lombez, L., & Naghavi, N. (2017). Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (p. 1594-1597). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366505

Mollica, F. ; Goffard, J. ; Jubault, M. et al. / Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1594-1597 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

@inproceedings{01401c1df1ca45eb8a615d54de17ae3d,

title = "Comparative study of patterned TiO2 and Al2O3 layers as passivated back-contact for ultra-thin Cu(In,Ga)Se2 solar cells",

abstract = "In this work, a low cost passivated back-contact for ultra-thin Cu(In,Ga)Se2-based (CIGS) solar cells to improve the carrier collection is developed. The current loss due to rear-interface recombination was first estimated with an accurate opto-electrical model. We compared the use of a sol-gel TiO2 and an ALD-Al2O3 layer for the back-contact passivation. 400-420 nm CIGS cells were fabricated on the oxide/Mo substrate with point-contacts patterned by nanoimprint lithography. The use of a patterned-Mo/Al2O3 back-contact leads to an increase of the cell performance compared to the standard Mo back-contact. The passivation effect is discussed and is characterized by photoluminescence.",

keywords = "Back-contact recombination, Charge carrier collection, Cu(In, Ga)Se, Nanoimprint, Passivation layer, Photoluminescence, Solar cells",

author = "F. Mollica and J. Goffard and M. Jubault and F. Donsanti and S. Collin and A. Cattoni and L. Lombez and N. Naghavi",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

month = jan,

day = "1",

doi = "10.1109/PVSC.2017.8366505",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

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Mollica, F, Goffard, J, Jubault, M, Donsanti, F, Collin, S, Cattoni, A, Lombez, L & Naghavi, N 2017, Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., p. 1594-1597, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, États-Unis, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366505

Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. / Mollica, F.; Goffard, J.; Jubault, M. et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1594-1597 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Comparative study of patterned TiO2 and Al2O3 layers as passivated back-contact for ultra-thin Cu(In,Ga)Se2 solar cells

AU - Mollica, F.

AU - Goffard, J.

AU - Jubault, M.

AU - Donsanti, F.

AU - Collin, S.

AU - Cattoni, A.

AU - Lombez, L.

AU - Naghavi, N.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this work, a low cost passivated back-contact for ultra-thin Cu(In,Ga)Se2-based (CIGS) solar cells to improve the carrier collection is developed. The current loss due to rear-interface recombination was first estimated with an accurate opto-electrical model. We compared the use of a sol-gel TiO2 and an ALD-Al2O3 layer for the back-contact passivation. 400-420 nm CIGS cells were fabricated on the oxide/Mo substrate with point-contacts patterned by nanoimprint lithography. The use of a patterned-Mo/Al2O3 back-contact leads to an increase of the cell performance compared to the standard Mo back-contact. The passivation effect is discussed and is characterized by photoluminescence.

AB - In this work, a low cost passivated back-contact for ultra-thin Cu(In,Ga)Se2-based (CIGS) solar cells to improve the carrier collection is developed. The current loss due to rear-interface recombination was first estimated with an accurate opto-electrical model. We compared the use of a sol-gel TiO2 and an ALD-Al2O3 layer for the back-contact passivation. 400-420 nm CIGS cells were fabricated on the oxide/Mo substrate with point-contacts patterned by nanoimprint lithography. The use of a patterned-Mo/Al2O3 back-contact leads to an increase of the cell performance compared to the standard Mo back-contact. The passivation effect is discussed and is characterized by photoluminescence.

KW - Back-contact recombination

KW - Charge carrier collection

KW - Cu(In

KW - Ga)Se

KW - Nanoimprint

KW - Passivation layer

KW - Photoluminescence

KW - Solar cells

UR - https://www.scopus.com/pages/publications/85048465595

U2 - 10.1109/PVSC.2017.8366505

DO - 10.1109/PVSC.2017.8366505

M3 - Conference contribution

AN - SCOPUS:85048465595

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 1594

EP - 1597

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Mollica F, Goffard J, Jubault M, Donsanti F, Collin S, Cattoni A et al. Comparative study of patterned TiO₂ and Al₂O₃ layers as passivated back-contact for ultra-thin Cu(In,Ga)Se₂ solar cells. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1594-1597. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366505