Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD

Isidro Martin; Delfina Muñoz; Cristóbal Voz; Michael Vetter; Ramon Alcubilla; Jerome Damon-Lacoste; Pere Roca I Cabarrocas; Fernando Villar; Joan Bertomeu; Jordi Andreu

doi:10.1109/WCPEC.2006.279332

Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD

Isidro Martin
, Delfina Muñoz
, Cristóbal Voz
, Michael Vetter
, Ramon Alcubilla
, Jerome Damon-Lacoste
, Pere Roca I Cabarrocas
, Fernando Villar
, Joan Bertomeu
, Jordi Andreu

Universidad Politecnica de Catalunia
Institut polytechnique de Paris
University of Barcelona

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

3 Citations (Scopus)

Résumé

In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use Spectroscopic Ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH₃ flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied V_oc values exceeding 665 mV.

langue originale	Anglais
titre	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Editeur	IEEE Computer Society
Pages	1091-1094
Nombre de pages	4
ISBN (imprimé)	1424400163, 9781424400164
Les DOIs	https://doi.org/10.1109/WCPEC.2006.279332
état	Publié - 1 janv. 2006
Evénement	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, États-Unis Durée: 7 mai 2006 → 12 mai 2006

Série de publications

Nom	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Une conférence

Une conférence	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pays/Territoire	États-Unis
La ville	Waikoloa, HI
période	7/05/06 → 12/05/06

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/WCPEC.2006.279332

Contient cette citation

Martin, I., Muñoz, D., Voz, C., Vetter, M., Alcubilla, R., Damon-Lacoste, J., Roca I Cabarrocas, P., Villar, F., Bertomeu, J., & Andreu, J. (2006). Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. Dans Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (p. 1091-1094). Article 4059823 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279332

Martin, Isidro ; Muñoz, Delfina ; Voz, Cristóbal et al. / Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1091-1094 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

@inproceedings{bf2eb74868424dd388ae375ebf0ea43d,

title = "Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD",

abstract = "In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use Spectroscopic Ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH3 flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied Voc values exceeding 665 mV.",

author = "Isidro Martin and Delfina Mu{\~n}oz and Crist{\'o}bal Voz and Michael Vetter and Ramon Alcubilla and Jerome Damon-Lacoste and \{Roca I Cabarrocas\}, Pere and Fernando Villar and Joan Bertomeu and Jordi Andreu",

year = "2006",

month = jan,

day = "1",

doi = "10.1109/WCPEC.2006.279332",

language = "English",

isbn = "1424400163",

series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

publisher = "IEEE Computer Society",

pages = "1091--1094",

booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

}

Martin, I, Muñoz, D, Voz, C, Vetter, M, Alcubilla, R, Damon-Lacoste, J, Roca I Cabarrocas, P, Villar, F, Bertomeu, J & Andreu, J 2006, Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. Dans Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059823, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, VOL. 1, IEEE Computer Society, p. 1091-1094, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, États-Unis, 7/05/06. https://doi.org/10.1109/WCPEC.2006.279332

Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. / Martin, Isidro; Muñoz, Delfina; Voz, Cristóbal et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1091-1094 4059823 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol 1).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD

AU - Martin, Isidro

AU - Muñoz, Delfina

AU - Voz, Cristóbal

AU - Vetter, Michael

AU - Alcubilla, Ramon

AU - Damon-Lacoste, Jerome

AU - Roca I Cabarrocas, Pere

AU - Villar, Fernando

AU - Bertomeu, Joan

AU - Andreu, Jordi

PY - 2006/1/1

Y1 - 2006/1/1

N2 - In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use Spectroscopic Ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH3 flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied Voc values exceeding 665 mV.

AB - In this work, we report on the last investigations of (n+) a-Si:H / (p) c-Si heterojunction solar cells deposited by both HWCVD and PECVD. Regarding HWCVD films, we use Spectroscopic Ellipsometry measurements to characterize the material properties of the deposited films. Particularly, we study the effect of the (i) a-Si:H film on the (n+) a-Si:H film growth. As far as PECVD films are concerned, an optimum PH3 flow is determined from the point of view of dark conductivity. Additionally, QSS-PC measurements are used to determine the improvement in the passivation quality of this film. Finally, HWCVD and PECVD HIT emitters are compared. A high quality in both emitters is deduced with implied Voc values exceeding 665 mV.

U2 - 10.1109/WCPEC.2006.279332

DO - 10.1109/WCPEC.2006.279332

M3 - Conference contribution

AN - SCOPUS:41749104854

SN - 1424400163

SN - 9781424400164

T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

SP - 1091

EP - 1094

BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

PB - IEEE Computer Society

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

Martin I, Muñoz D, Voz C, Vetter M, Alcubilla R, Damon-Lacoste J et al. Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD. Dans Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1091-1094. 4059823. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279332

Comparison of (n+) a-Si:H / (p) c-Si heterojunction emitters using a-Si:H films deposited by PECVD or HWCVD

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SDG des Nations Unies

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