Compton profiles of amorphous and hydrogenated amorphous silicon

High resolution Compton profiles were measured by hydrogenated, dehydrogenated amorphous silicon powder and finally on the recrystallized sample, using synchrotron radiation. The observed structures seen in difference profiles are discussed, using two different rigid-band approaches for hydrogen insertion process. In particular, the analysis of results can support the hypothesis of very short H-H bonds in the a-Si: H host. The long range order in the recrystallized sample was clearly evidenced by the present high resolution results. Nevertheless, these experimental results require a more accurate model than the rigid band assumption for the understanding of electronic distorsion due to hydrogen.