Résumé
Electronic transport of microcrystalline silicon is analyzed by diffusion-induced time resolved microwave conductivity (DTRMC), a new contactless method based on time resolved microwave conductivity (TRMC) and related to the carrier diffusion in the analyzed sample. This method, associated with TRMC and with Hall measurement, is used to investigate the transport in microcrystalline silicon. The techniques are used to compare the mean longitudinal, the mean transversal and the local transport. Comparison of various samples illustrates the influence of film structure on the electronic transport.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 63-66 |
| Nombre de pages | 4 |
| journal | Thin Solid Films |
| Volume | 337 |
| Numéro de publication | 1-2 |
| Les DOIs | |
| état | Publié - 11 janv. 1999 |
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