Control of electron transport related defects in in situ fabricated single wall carbon nanotube devices

Metallic single wall carbon nanotube devices were characterized using low temperature transport measurements to study how the growth conditions affect defect formation in carbon nanotubes. Suspended carbon nanotube devices were grown in situ by a molecular beam growth method on a pair of catalyst islands located on opposing Au electrodes fabricated by electron beam lithography. The authors present experimental evidence that defect formation in carbon nanotubes, in addition to the well known growth temperature dependence, is also affected by the nature and the composition of the carbon growth gases.