Copper indium diselenide solar cells prepared by electrodeposition

D. Guimard; P. P. Grand; N. Bodereau; P. Cowache; J. F. Guillemoles; D. Lincot; S. Taunier; M. Ben Farah; P. Mogensen

Copper indium diselenide solar cells prepared by electrodeposition

D. Guimard
, P. P. Grand
, N. Bodereau
, P. Cowache
, J. F. Guillemoles
, D. Lincot
, S. Taunier
, M. Ben Farah
, P. Mogensen

CNRS
Saint-Gobain

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

20 Citations (Scopus)

Résumé

Copper indium diselenide (CIS) layers have been prepared by an electrodeposition based process. The composition, density and adhesion properties of theses films were found to be highly suitable for use as the active layer in a CIS solar cell. After recrystallisation and the completion of the device layer (by the deposition of CdS and ZnO layers), efficiencies as high as 8.8% were found (total area, 100 mW/cm², no AR coating) for small area devices (0.06 cm²). To the best of our knowledge, this is a record efficiency for electrodeposited CIS, without any post additional vacuum deposition process. Promising results have been also obtained on 5×5 cm² substrates (average efficiency of 4.5%).

langue originale	Anglais
Pages (de - à)	692-695
Nombre de pages	4
journal	Conference Record of the IEEE Photovoltaic Specialists Conference
état	Publié - 1 déc. 2002
Evénement	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, États-Unis Durée: 19 mai 2002 → 24 mai 2002

Contient cette citation

@article{4e447830a3a64777b0300a88527b6df6,

title = "Copper indium diselenide solar cells prepared by electrodeposition",

abstract = "Copper indium diselenide (CIS) layers have been prepared by an electrodeposition based process. The composition, density and adhesion properties of theses films were found to be highly suitable for use as the active layer in a CIS solar cell. After recrystallisation and the completion of the device layer (by the deposition of CdS and ZnO layers), efficiencies as high as 8.8\% were found (total area, 100 mW/cm2, no AR coating) for small area devices (0.06 cm2). To the best of our knowledge, this is a record efficiency for electrodeposited CIS, without any post additional vacuum deposition process. Promising results have been also obtained on 5{\texttimes}5 cm2 substrates (average efficiency of 4.5\%).",

author = "D. Guimard and Grand, \{P. P.\} and N. Bodereau and P. Cowache and Guillemoles, \{J. F.\} and D. Lincot and S. Taunier and Farah, \{M. Ben\} and P. Mogensen",

year = "2002",

month = dec,

day = "1",

language = "English",

pages = "692--695",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

}

TY - JOUR

T1 - Copper indium diselenide solar cells prepared by electrodeposition

AU - Guimard, D.

AU - Grand, P. P.

AU - Bodereau, N.

AU - Cowache, P.

AU - Guillemoles, J. F.

AU - Lincot, D.

AU - Taunier, S.

AU - Farah, M. Ben

AU - Mogensen, P.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Copper indium diselenide (CIS) layers have been prepared by an electrodeposition based process. The composition, density and adhesion properties of theses films were found to be highly suitable for use as the active layer in a CIS solar cell. After recrystallisation and the completion of the device layer (by the deposition of CdS and ZnO layers), efficiencies as high as 8.8% were found (total area, 100 mW/cm2, no AR coating) for small area devices (0.06 cm2). To the best of our knowledge, this is a record efficiency for electrodeposited CIS, without any post additional vacuum deposition process. Promising results have been also obtained on 5×5 cm2 substrates (average efficiency of 4.5%).

AB - Copper indium diselenide (CIS) layers have been prepared by an electrodeposition based process. The composition, density and adhesion properties of theses films were found to be highly suitable for use as the active layer in a CIS solar cell. After recrystallisation and the completion of the device layer (by the deposition of CdS and ZnO layers), efficiencies as high as 8.8% were found (total area, 100 mW/cm2, no AR coating) for small area devices (0.06 cm2). To the best of our knowledge, this is a record efficiency for electrodeposited CIS, without any post additional vacuum deposition process. Promising results have been also obtained on 5×5 cm2 substrates (average efficiency of 4.5%).

M3 - Conference article

AN - SCOPUS:0036948822

SN - 0160-8371

SP - 692

EP - 695

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Copper indium diselenide solar cells prepared by electrodeposition

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