Correlation between electrical activity and various structures of Ge grain boundaries

The links between the electrical activity and the atomic structure of various Ge grain boundaries (GBs) are investigated. The atomic structure is studied using high resolution electron microscopy, while the electrical activity is evaluated thanks to the measurement of minority carrier lifetime by means of the contactless microwave phase shift technique. Results show that in the Σ = 51 GB the electrical activity depends on the atomic structure connected to the configuration of the grain boundary, i.e. tilt, twist or mixed. Lower energy structures such as Σ = 3 and 9 GBs appear not to be recombinant.