CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films

X. Y. Tao; I. Fsaifes; V. Koncar; C. Dufour; C. Lepers; L. Hay; B. Capoen; M. Bouazaoui

doi:10.1007/s00339-009-5157-7

CO₂ laser-induced crystallization of sol-gel-derived indium tin oxide films

X. Y. Tao
, I. Fsaifes
, V. Koncar
, C. Dufour
, C. Lepers
, L. Hay
, B. Capoen
, M. Bouazaoui

ENSAIT/GEMTEX
UMR 8523–PhLAM–Physique des Lasers Atomes et Molécules
Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN)

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Indium tin oxide (ITO) thin films prepared by the sol-gel method have been deposited by the dip-coating process on silica substrates. CO₂ laser is used for annealing treatments. The electrical resistivity of sol-gel-derived ITO thin films decreased following crystallization after exposure to CO ₂ laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m² laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×10² Ω/□.

langue originale	Anglais
Pages (de - à)	741-749
Nombre de pages	9
journal	Applied Physics A: Materials Science and Processing
Volume	96
Numéro de publication	3
Les DOIs	https://doi.org/10.1007/s00339-009-5157-7
état	Publié - 1 août 2009
Modification externe	Oui

Accès au document

10.1007/s00339-009-5157-7

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Contient cette citation

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title = "CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films",

abstract = "Indium tin oxide (ITO) thin films prepared by the sol-gel method have been deposited by the dip-coating process on silica substrates. CO2 laser is used for annealing treatments. The electrical resistivity of sol-gel-derived ITO thin films decreased following crystallization after exposure to CO 2 laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m2 laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×102 Ω/□.",

author = "Tao, \{X. Y.\} and I. Fsaifes and V. Koncar and C. Dufour and C. Lepers and L. Hay and B. Capoen and M. Bouazaoui",

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doi = "10.1007/s00339-009-5157-7",

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TY - JOUR

T1 - CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films

AU - Tao, X. Y.

AU - Fsaifes, I.

AU - Koncar, V.

AU - Dufour, C.

AU - Lepers, C.

AU - Hay, L.

AU - Capoen, B.

AU - Bouazaoui, M.

PY - 2009/8/1

Y1 - 2009/8/1

N2 - Indium tin oxide (ITO) thin films prepared by the sol-gel method have been deposited by the dip-coating process on silica substrates. CO2 laser is used for annealing treatments. The electrical resistivity of sol-gel-derived ITO thin films decreased following crystallization after exposure to CO 2 laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m2 laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×102 Ω/□.

AB - Indium tin oxide (ITO) thin films prepared by the sol-gel method have been deposited by the dip-coating process on silica substrates. CO2 laser is used for annealing treatments. The electrical resistivity of sol-gel-derived ITO thin films decreased following crystallization after exposure to CO 2 laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m2 laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×102 Ω/□.

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U2 - 10.1007/s00339-009-5157-7

DO - 10.1007/s00339-009-5157-7

M3 - Article

AN - SCOPUS:67651243884

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