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Coupled theoretical and experimental studies for the radiation hardening of silica-based optical fibers

  • N. Richard
  • , S. Girard
  • , L. Giacomazzi
  • , L. Martin-Samos
  • , D. Di Francesca
  • , C. Marcandella
  • , A. Alessi
  • , P. Paillet
  • , S. Agnello
  • , A. Boukenter
  • , Y. Ouerdane
  • , M. Cannas
  • , R. Boscaino
  • CEA/UVSQ/CNRS
  • Laboratoire Hubert Curien UMR CNRS 5516
  • International School for Advanced Studies (SISSA/ISAS)
  • University of Nova Gorica
  • University of Palermo

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collectionContribution à une conférenceRevue par des pairs

Résumé

We applied theoretical and experimental spectroscopy tools to ad hoc silica-based 'canonical' samples to characterize the influence of several dopants and of some drawing process parameters on their radiation sensitivities. We present in this paper, the recent advances and results occurring from our coupled approach. On the experimental side, we studied the doping influence on the response of optical fibers and showed that changing the drawing parameters has a negligible influence on the fiber response in the case of specialty fibers. We focus mainly on the SiE' defect that is observed through Electronic Paramagnetic Resonance (EPR) measurements in all canonical samples. On the theoretical side, we exhibit the improvements obtained in the calculations of electronic and optical properties of defects by using Many Body Perturbation Theory through the use of the GW approximation and the resolution of the Bethe-Salpeter equation instead of the Density Functional Theory (Local Density Approximation). To continue to strengthen the link between experiment and simulation, we have performed first-principles calculations of EPR parameters of some silica-based defects. The first results allowing for an attribution of EPR E' signals to structural models are presented. In particular, we confirm that the E'Y center is originated by an unpaired electron in a sp3 state at a three-fold coordinated silicon atom.

langue originaleAnglais
titreProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
EditeurInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronique)9781467350570
Les DOIs
étatPublié - 28 oct. 2013
Modification externeOui
Evénement2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013 - Oxford, Royaume-Uni
Durée: 23 sept. 201327 sept. 2013

Série de publications

NomProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Une conférence

Une conférence2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013
Pays/TerritoireRoyaume-Uni
La villeOxford
période23/09/1327/09/13

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