TY - GEN
T1 - Coupling the multi phase-field method with an electro-thermal solver to simulate phase change mechanisms in ge-rich GST based PCM
AU - Bayle, Raphael
AU - Cueto, Olga
AU - Blonkowski, Serge
AU - Philippe, Thomas
AU - Henry, Herve
AU - Plapp, Mathis
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/9/23
Y1 - 2020/9/23
N2 - The ternary alloy GeSbTe is widely used as material for phase-change memories. Thanks to an optimized Ge-rich GeSbTe alloy, the crystallizion temperature of the alloy is increased and the stability requirements of high working temperature required for automotive applications are fullfilled, but the crystallization of the Ge-rich alloy proceeds with a composition change and a phase separation. We have developed a multi-phase-field model for the crystallization of the Ge-rich GeSbTe alloy and we have coupled it to an electro-thermal solver. This model is able to capture both the emergence of a two-phase polycristalline structure starting from an initially amorphous material, and the melting and recrystallization during the device operations.
AB - The ternary alloy GeSbTe is widely used as material for phase-change memories. Thanks to an optimized Ge-rich GeSbTe alloy, the crystallizion temperature of the alloy is increased and the stability requirements of high working temperature required for automotive applications are fullfilled, but the crystallization of the Ge-rich alloy proceeds with a composition change and a phase separation. We have developed a multi-phase-field model for the crystallization of the Ge-rich GeSbTe alloy and we have coupled it to an electro-thermal solver. This model is able to capture both the emergence of a two-phase polycristalline structure starting from an initially amorphous material, and the melting and recrystallization during the device operations.
KW - Crystallization with segregation
KW - Multi phase-field method
KW - Phase Change Memories
KW - Simulation
U2 - 10.23919/SISPAD49475.2020.9241619
DO - 10.23919/SISPAD49475.2020.9241619
M3 - Conference contribution
AN - SCOPUS:85096243748
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 173
EP - 176
BT - 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
Y2 - 3 September 2020 through 6 October 2020
ER -