Crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition

J. Farjas; Chandana Rath; P. Roura; P. Roca I Cabarrocas

doi:10.1016/j.apsusc.2004.05.200

Crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition

J. Farjas
, Chandana Rath
, P. Roura
, P. Roca I Cabarrocas

GRMT

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

The crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition is studied by differential scanning and isothermal calorimetry in a wide temperature range varying from 600 to 720°C. The reported kinetics is found to correspond to three-dimensional growth. The kinetic parameters obtained are in good agreement with those already published on thin films.

langue originale	Anglais
Pages (de - à)	165-168
Nombre de pages	4
journal	Applied Surface Science
Volume	238
Numéro de publication	1-4 SPEC. ISS.
Les DOIs	https://doi.org/10.1016/j.apsusc.2004.05.200
état	Publié - 15 nov. 2004
Evénement	APHYS 2003 - Badajoz, Espagne Durée: 13 oct. 2003 → 18 oct. 2003

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10.1016/j.apsusc.2004.05.200

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@article{7d7e401d7e3044d99358b4a76a7875a1,

title = "Crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition",

abstract = "The crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition is studied by differential scanning and isothermal calorimetry in a wide temperature range varying from 600 to 720°C. The reported kinetics is found to correspond to three-dimensional growth. The kinetic parameters obtained are in good agreement with those already published on thin films.",

keywords = "Amorphous silicon, Crystallization kinetics, DSC",

author = "J. Farjas and Chandana Rath and P. Roura and \{Roca I Cabarrocas\}, P.",

year = "2004",

month = nov,

day = "15",

doi = "10.1016/j.apsusc.2004.05.200",

language = "English",

volume = "238",

pages = "165--168",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "1-4 SPEC. ISS.",

note = "APHYS 2003 ; Conference date: 13-10-2003 Through 18-10-2003",

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TY - JOUR

T1 - Crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition

AU - Farjas, J.

AU - Rath, Chandana

AU - Roura, P.

AU - Roca I Cabarrocas, P.

PY - 2004/11/15

Y1 - 2004/11/15

N2 - The crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition is studied by differential scanning and isothermal calorimetry in a wide temperature range varying from 600 to 720°C. The reported kinetics is found to correspond to three-dimensional growth. The kinetic parameters obtained are in good agreement with those already published on thin films.

AB - The crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition is studied by differential scanning and isothermal calorimetry in a wide temperature range varying from 600 to 720°C. The reported kinetics is found to correspond to three-dimensional growth. The kinetic parameters obtained are in good agreement with those already published on thin films.

KW - Amorphous silicon

KW - Crystallization kinetics

KW - DSC

U2 - 10.1016/j.apsusc.2004.05.200

DO - 10.1016/j.apsusc.2004.05.200

M3 - Conference article

AN - SCOPUS:4644247198

SN - 0169-4332

VL - 238

SP - 165

EP - 168

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4 SPEC. ISS.

T2 - APHYS 2003

Y2 - 13 October 2003 through 18 October 2003

ER -

Crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition

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