Cu(In,Ga)Se2 mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight

M. Paire; C. Jean; L. Lombez; S. Collin; J. L. Pelouard; D. Lincot; J. F. Guillemoles

doi:10.1117/12.2039579

Cu(In,Ga)Se₂ mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight

M. Paire
, C. Jean
, L. Lombez
, S. Collin
, J. L. Pelouard
, D. Lincot
, J. F. Guillemoles

Lamsid/EDF/R and D
CNRS
PSL University
Centre de Nanosciences et de Nanotechnologies

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 Im do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.

langue originale	Anglais
titre	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Editeur	SPIE
ISBN (imprimé)	9780819498946
Les DOIs	https://doi.org/10.1117/12.2039579
état	Publié - 1 janv. 2014
Evénement	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III - San Francisco, CA, États-Unis Durée: 3 févr. 2014 → 6 févr. 2014

Série de publications

Nom	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8981
ISSN (imprimé)	0277-786X
ISSN (Electronique)	1996-756X

Une conférence

Une conférence	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Pays/Territoire	États-Unis
La ville	San Francisco, CA
période	3/02/14 → 6/02/14

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1117/12.2039579

Autres fichiers et liens

Lien vers la publication dans Scopus

Contient cette citation

Paire, M., Jean, C., Lombez, L., Collin, S., Pelouard, J. L., Lincot, D., & Guillemoles, J. F. (2014). Cu(In,Ga)Se₂ mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight. Dans Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III Article 89810Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol 8981). SPIE. https://doi.org/10.1117/12.2039579

@inproceedings{13caf3f131884a5b8319639740034c1e,

title = "Cu(In,Ga)Se2 mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight",

abstract = "In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 Im do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.",

keywords = "Concentration, Cu(In, Edge recombination, Ga)Se2, Mesa diodes, Microcell, Thin film",

author = "M. Paire and C. Jean and L. Lombez and S. Collin and Pelouard, \{J. L.\} and D. Lincot and Guillemoles, \{J. F.\}",

year = "2014",

month = jan,

day = "1",

doi = "10.1117/12.2039579",

language = "English",

isbn = "9780819498946",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

booktitle = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III",

note = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III ; Conference date: 03-02-2014 Through 06-02-2014",

}

Paire, M, Jean, C, Lombez, L, Collin, S, Pelouard, JL, Lincot, D & Guillemoles, JF 2014, Cu(In,Ga)Se₂ mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight. Dans Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III., 89810Z, Proceedings of SPIE - The International Society for Optical Engineering, VOL. 8981, SPIE, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, San Francisco, CA, États-Unis, 3/02/14. https://doi.org/10.1117/12.2039579

Cu(In,Ga)Se₂ mesa microdiodes: Study of edge recombination and behaviour under concentrated sunlight. / Paire, M.; Jean, C.; Lombez, L. et al.
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III. SPIE, 2014. 89810Z (Proceedings of SPIE - The International Society for Optical Engineering; Vol 8981).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Cu(In,Ga)Se2 mesa microdiodes

T2 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III

AU - Paire, M.

AU - Jean, C.

AU - Lombez, L.

AU - Collin, S.

AU - Pelouard, J. L.

AU - Lincot, D.

AU - Guillemoles, J. F.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 Im do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.

AB - In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 Im do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.

KW - Concentration

KW - Cu(In

KW - Edge recombination

KW - Ga)Se2

KW - Mesa diodes

KW - Microcell

KW - Thin film

UR - https://www.scopus.com/pages/publications/84901753644

U2 - 10.1117/12.2039579

DO - 10.1117/12.2039579

M3 - Conference contribution

AN - SCOPUS:84901753644

SN - 9780819498946

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III

PB - SPIE

Y2 - 3 February 2014 through 6 February 2014

ER -