Defect Physics of CuInSe2 for Photovoltaic Applications using Extended X-ray Absorption Fine Structure (EXAFS)

Theanne Schiros; Scott Calvin; P. E. Stallworth; Faisal Alamgir; J. F. Guillemoles; S. G. Greenbaum; M. L. Den Boer

doi:10.1557/proc-763-b1.2

Defect Physics of CuInSe₂ for Photovoltaic Applications using Extended X-ray Absorption Fine Structure (EXAFS)

Theanne Schiros
, Scott Calvin
, P. E. Stallworth
, Faisal Alamgir
, J. F. Guillemoles
, S. G. Greenbaum
, M. L. Den Boer

Hunter College
Naval Research Laboratory
Laboratoire Charles Friedel (LCF)

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

Native point defects in undoped samples of CuInSe₂ (CIS) have been identified by a multiple-edge refinement of the extended x-ray absorption fine structure of the copper, indium and selenium absorption edges. Ab initio theoretical models for the pure compound and for various defect structures were constructed and carrier-type statistics were predicted by simultaneously fitting multiple absorption sites to these models. As expected, a model of our measurements based on pure compounds with no defects does not yield a good fit to the data. We find that a best fit requires a significant population of defects. Preliminary quantitative analysis suggests a 15 % vacancy in Cu, a 2-12% population of Cu-Se anti-sites and 15% In-Se anti-sites.

langue originale	Anglais
Pages (de - à)	13-18
Nombre de pages	6
journal	Materials Research Society Symposium - Proceedings
Volume	763
Les DOIs	https://doi.org/10.1557/proc-763-b1.2
état	Publié - 1 janv. 2003
Modification externe	Oui
Evénement	MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, États-Unis Durée: 22 avr. 2003 → 25 avr. 2003

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10.1557/proc-763-b1.2

Contient cette citation

@article{efe9a46b13ad4683958dd9fcf435998f,

title = "Defect Physics of CuInSe2 for Photovoltaic Applications using Extended X-ray Absorption Fine Structure (EXAFS)",

abstract = "Native point defects in undoped samples of CuInSe2 (CIS) have been identified by a multiple-edge refinement of the extended x-ray absorption fine structure of the copper, indium and selenium absorption edges. Ab initio theoretical models for the pure compound and for various defect structures were constructed and carrier-type statistics were predicted by simultaneously fitting multiple absorption sites to these models. As expected, a model of our measurements based on pure compounds with no defects does not yield a good fit to the data. We find that a best fit requires a significant population of defects. Preliminary quantitative analysis suggests a 15 \% vacancy in Cu, a 2-12\% population of Cu-Se anti-sites and 15\% In-Se anti-sites.",

author = "Theanne Schiros and Scott Calvin and Stallworth, \{P. E.\} and Faisal Alamgir and Guillemoles, \{J. F.\} and Greenbaum, \{S. G.\} and \{Den Boer\}, \{M. L.\}",

year = "2003",

month = jan,

day = "1",

doi = "10.1557/proc-763-b1.2",

language = "English",

volume = "763",

pages = "13--18",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics ; Conference date: 22-04-2003 Through 25-04-2003",

}

TY - JOUR

T1 - Defect Physics of CuInSe2 for Photovoltaic Applications using Extended X-ray Absorption Fine Structure (EXAFS)

AU - Schiros, Theanne

AU - Calvin, Scott

AU - Stallworth, P. E.

AU - Alamgir, Faisal

AU - Guillemoles, J. F.

AU - Greenbaum, S. G.

AU - Den Boer, M. L.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Native point defects in undoped samples of CuInSe2 (CIS) have been identified by a multiple-edge refinement of the extended x-ray absorption fine structure of the copper, indium and selenium absorption edges. Ab initio theoretical models for the pure compound and for various defect structures were constructed and carrier-type statistics were predicted by simultaneously fitting multiple absorption sites to these models. As expected, a model of our measurements based on pure compounds with no defects does not yield a good fit to the data. We find that a best fit requires a significant population of defects. Preliminary quantitative analysis suggests a 15 % vacancy in Cu, a 2-12% population of Cu-Se anti-sites and 15% In-Se anti-sites.

AB - Native point defects in undoped samples of CuInSe2 (CIS) have been identified by a multiple-edge refinement of the extended x-ray absorption fine structure of the copper, indium and selenium absorption edges. Ab initio theoretical models for the pure compound and for various defect structures were constructed and carrier-type statistics were predicted by simultaneously fitting multiple absorption sites to these models. As expected, a model of our measurements based on pure compounds with no defects does not yield a good fit to the data. We find that a best fit requires a significant population of defects. Preliminary quantitative analysis suggests a 15 % vacancy in Cu, a 2-12% population of Cu-Se anti-sites and 15% In-Se anti-sites.

U2 - 10.1557/proc-763-b1.2

DO - 10.1557/proc-763-b1.2

M3 - Conference article

AN - SCOPUS:0345359210

SN - 0272-9172

VL - 763

SP - 13

EP - 18

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics

Y2 - 22 April 2003 through 25 April 2003