Degradation Study of InGaAsN p-i-n Solar Cell under 1-MeV Electron Irradiation

M. Levillayer; S. Duzellier; I. Massiot; A. Arnoult; T. Nuns; C. Inguimbert; C. Aicardi; S. Parola; F. Olivie; R. Monflier; T. Le Cocq; R. Rey; C. Pons; G. Almuneau; L. Artola

doi:10.1109/TNS.2021.3068044

Degradation Study of InGaAsN p-i-n Solar Cell under 1-MeV Electron Irradiation

M. Levillayer
, S. Duzellier
, I. Massiot
, A. Arnoult
, T. Nuns
, C. Inguimbert
, C. Aicardi
, S. Parola
, F. Olivie
, R. Monflier
, T. Le Cocq
, R. Rey
, C. Pons
, G. Almuneau
, L. Artola

ONERA Office National d'Etudes et Recherches Aerospatiales
LAAS-CNRS
Centre National d'études Spatiales
University of Montpellier (UMR MiVEGEC)

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

3 Citations (Scopus)

Résumé

The degradation of InGaAsN p-i-n subcell under 1-MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94% of their original photocurrent after 1015 cm-2, 1-MeV electron irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.

langue originale	Anglais
Numéro d'article	9383017
Pages (de - à)	1694-1700
Nombre de pages	7
journal	IEEE Transactions on Nuclear Science
Volume	68
Numéro de publication	8
Les DOIs	https://doi.org/10.1109/TNS.2021.3068044
état	Publié - 1 août 2021
Modification externe	Oui

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10.1109/TNS.2021.3068044

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Levillayer, M., Duzellier, S., Massiot, I., Arnoult, A., Nuns, T., Inguimbert, C., Aicardi, C., Parola, S., Olivie, F., Monflier, R., Le Cocq, T., Rey, R., Pons, C., Almuneau, G., & Artola, L. (2021). Degradation Study of InGaAsN p-i-n Solar Cell under 1-MeV Electron Irradiation. IEEE Transactions on Nuclear Science, 68(8), 1694-1700. Article 9383017. https://doi.org/10.1109/TNS.2021.3068044

@article{022fed83a17f4604a894db5f8ecd468a,

title = "Degradation Study of InGaAsN p-i-n Solar Cell under 1-MeV Electron Irradiation",

abstract = "The degradation of InGaAsN p-i-n subcell under 1-MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94\% of their original photocurrent after 1015 cm-2, 1-MeV electron irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.",

keywords = "Deep-level transient spectroscopy (DLTS), InGaAsN, degradation, dilute nitrides, electrons, external quantum efficiency (EQE), irradiation, multijunction solar cell (MJSC), photoluminescence (PL), solar cell",

author = "M. Levillayer and S. Duzellier and I. Massiot and A. Arnoult and T. Nuns and C. Inguimbert and C. Aicardi and S. Parola and F. Olivie and R. Monflier and \{Le Cocq\}, T. and R. Rey and C. Pons and G. Almuneau and L. Artola",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

month = aug,

day = "1",

doi = "10.1109/TNS.2021.3068044",

language = "English",

volume = "68",

pages = "1694--1700",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

number = "8",

}

Levillayer, M, Duzellier, S, Massiot, I, Arnoult, A, Nuns, T, Inguimbert, C, Aicardi, C, Parola, S, Olivie, F, Monflier, R, Le Cocq, T, Rey, R, Pons, C, Almuneau, G & Artola, L 2021, 'Degradation Study of InGaAsN p-i-n Solar Cell under 1-MeV Electron Irradiation', IEEE Transactions on Nuclear Science, VOL. 68, Numéro 8, 9383017, p. 1694-1700. https://doi.org/10.1109/TNS.2021.3068044

TY - JOUR

T1 - Degradation Study of InGaAsN p-i-n Solar Cell under 1-MeV Electron Irradiation

AU - Levillayer, M.

AU - Duzellier, S.

AU - Massiot, I.

AU - Arnoult, A.

AU - Nuns, T.

AU - Inguimbert, C.

AU - Aicardi, C.

AU - Parola, S.

AU - Olivie, F.

AU - Monflier, R.

AU - Le Cocq, T.

AU - Rey, R.

AU - Pons, C.

AU - Almuneau, G.

AU - Artola, L.

PY - 2021/8/1

Y1 - 2021/8/1

N2 - The degradation of InGaAsN p-i-n subcell under 1-MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94% of their original photocurrent after 1015 cm-2, 1-MeV electron irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.

AB - The degradation of InGaAsN p-i-n subcell under 1-MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94% of their original photocurrent after 1015 cm-2, 1-MeV electron irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.

KW - Deep-level transient spectroscopy (DLTS)

KW - InGaAsN

KW - degradation

KW - dilute nitrides

KW - electrons

KW - external quantum efficiency (EQE)

KW - irradiation

KW - multijunction solar cell (MJSC)

KW - photoluminescence (PL)

KW - solar cell

UR - https://www.scopus.com/pages/publications/85103292017

U2 - 10.1109/TNS.2021.3068044

DO - 10.1109/TNS.2021.3068044

M3 - Article

AN - SCOPUS:85103292017

SN - 0018-9499

VL - 68

SP - 1694

EP - 1700

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 8

M1 - 9383017

ER -

Degradation Study of InGaAsN p-i-n Solar Cell under 1-MeV Electron Irradiation

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