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Demonstration of 1.51m InAs/InP(311)B quantum dot single-mode laser operating under continuous wave

  • G. Moreau
  • , K. Merghem
  • , A. Martinez
  • , S. Bouchoule
  • , A. Ramdane
  • , F. Grillot
  • , R. Piron
  • , O. Dehease
  • , E. Homeyer
  • , K. Tavernier
  • , S. Loualiche
  • , P. Berdaguer
  • , F. Pommerau
  • CNRS
  • INSA Rennes
  • Alcatel-Thales III-V Laboratory

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

The achievement of a 1.51m InAs/InP(311)B quantum dot (QD) single-mode Fabry-Perot laser operating under continuous wave at room temperature is reported. A threshold current of 80mA associated with a 0.12W/A external efficiency is reported for as-cleaved device at room temperature. The maximum output power, the gain peak wavelength at threshold and the full width at half maximum of the spectral gain are 5mW, 1512nm and 60nm, respectively. Although these performances must be improved in the future, these results constitute to our knowledge the state-of-the-art on InP(3 1 1)B substrate. These results are of great interest since QD-based lasers are expected to play a major role in the next generation telecommunication networks as low-cost devices.

langue originaleAnglais
Pages (de - à)255-258
Nombre de pages4
journalIET Optoelectronics
Volume1
Numéro de publication6
Les DOIs
étatPublié - 24 déc. 2007

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