Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon

H. R. Park; J. Z. Liu; P. Roca I Cabarrocas; A. Maruyama; M. Isomura; S. Wagner; J. R. Abelson; F. Finger

doi:10.1063/1.103364

Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon

H. R. Park
, J. Z. Liu
, P. Roca I Cabarrocas
, A. Maruyama
, M. Isomura
, S. Wagner
, J. R. Abelson
, F. Finger

Princeton University
University of Illinois
University of Neuchâtel

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

34 Citations (Scopus)

Résumé

We report a study of the saturated light-induced defect density N _s,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. N_s,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). N_s,sat is determined by the constant photocurrent method and lies between 5×10¹⁶ and 2×10¹⁷ cm^-3. N_s,sat drops with decreasing optical gap E_opt and hydrogen content c_H, but is not correlated with the initial defect density N_s,ann or with the Urbach tail energy E_u. We discuss our results within the framework of existing models for light-induced defects.

langue originale	Anglais
Pages (de - à)	1440-1442
Nombre de pages	3
journal	Applied Physics Letters
Volume	57
Numéro de publication	14
Les DOIs	https://doi.org/10.1063/1.103364
état	Publié - 1 déc. 1990
Modification externe	Oui

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@article{9996633452b348a0bc0cd76a2b252ded,

title = "Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon",

abstract = "We report a study of the saturated light-induced defect density N s,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm-3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlated with the initial defect density Ns,ann or with the Urbach tail energy Eu. We discuss our results within the framework of existing models for light-induced defects.",

author = "Park, \{H. R.\} and Liu, \{J. Z.\} and \{Roca I Cabarrocas\}, P. and A. Maruyama and M. Isomura and S. Wagner and Abelson, \{J. R.\} and F. Finger",

year = "1990",

month = dec,

day = "1",

doi = "10.1063/1.103364",

language = "English",

volume = "57",

pages = "1440--1442",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon

AU - Park, H. R.

AU - Liu, J. Z.

AU - Roca I Cabarrocas, P.

AU - Maruyama, A.

AU - Isomura, M.

AU - Wagner, S.

AU - Abelson, J. R.

AU - Finger, F.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - We report a study of the saturated light-induced defect density N s,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm-3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlated with the initial defect density Ns,ann or with the Urbach tail energy Eu. We discuss our results within the framework of existing models for light-induced defects.

AB - We report a study of the saturated light-induced defect density N s,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm-3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlated with the initial defect density Ns,ann or with the Urbach tail energy Eu. We discuss our results within the framework of existing models for light-induced defects.

U2 - 10.1063/1.103364

DO - 10.1063/1.103364

M3 - Article

AN - SCOPUS:36549097619

SN - 0003-6951

VL - 57

SP - 1440

EP - 1442

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon

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