Résumé
We present the integration of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack including a hydrogenated amorphous silicon P-i-N junction surrounded by TCO layers, with a back metallic contact. Optical simulations exhibit a significant increase of the integrated absorption in the 300-720nm wavelength range. The global electro-optical characteristics of such a new solar cell, and the impact of surface passivation, are also discussed. Carrier generation rate maps calculated by optical simulations are introduced as input data in a commercial electrical simulation software. The fabrication of such a device is finally addressed, with a specific focus on the use of low cost nanopatterning processes compatible with large areas.
| langue originale | Anglais |
|---|---|
| titre | Photonics for Solar Energy Systems III |
| Editeur | SPIE |
| ISBN (imprimé) | 9780819481986 |
| Les DOIs | |
| état | Publié - 1 janv. 2010 |
| Evénement | Photonics for Solar Energy Systems III - Brussels, Belgique Durée: 13 avr. 2010 → 15 avr. 2010 |
Série de publications
| Nom | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 7725 |
| ISSN (imprimé) | 0277-786X |
Une conférence
| Une conférence | Photonics for Solar Energy Systems III |
|---|---|
| Pays/Territoire | Belgique |
| La ville | Brussels |
| période | 13/04/10 → 15/04/10 |
SDG des Nations Unies
Ce résultat contribue à ou aux Objectifs de développement durable suivants
-
SDG 7 Énergie abordable et propre
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