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Design of quaternary logic gate using double pass-transistor logic with neuron MOS down literal circuit

  • Soo Jin Park
  • , Byoung Hee Yoon
  • , Kwang Sub Yoon
  • , Heung Soo Kim
  • Inha University

Résultats de recherche: Contribution à un journalArticle de conférenceRevue par des pairs

Résumé

A multi-valued logic(MVL) pass gate is an important element to configure multi-valued logic. Multiple logical levels which are different from binary pass gates are required to be discriminated in MVL pass gates[1]. In this paper, we designed the Quaternary MIN(QMIN)/negated MIN(QNMIN) gate, the Quaternary MAX(QMAX)/negated MAX(QNMAX) gate using double pass-transistor logic(DPL) with neuron MOS(vMOS) threshold gate. And also we designed Quaternary Truncated Sum(QTS) and Quaternary Truncated Difference(QTD) gate using vMOS down literal circuit(DLC). DPL is improved the gate speed without increasing the input capacitance. It has a symmetrical arrangement and double-transmission characteristics. The threshold gates are composed by vMOS DLC. The proposed gates get the valued to realize various multi threshold voltages. In this paper, these circuits are used 3V power supply voltage and parameter of 0.35um N-Well 2-poly 4-metal CMOS technology, and also represented HSPICE simulation results.

langue originaleAnglais
Pages (de - à)198-203
Nombre de pages6
journalProceedings of The International Symposium on Multiple-Valued Logic
étatPublié - 27 juil. 2004
Modification externeOui
EvénementProceedings - 34th International Symposium on Multiple-Values Logic, ISMVL 2004 - Toronto, Ont, Canada
Durée: 19 mai 200422 mai 2004

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