Design of TAS-MRAM prototype for NV embedded memory applications

Sumanta Chaudhuri; Weisheng Zhao; Jacques Olivier Klein; Claude Chappert; Pascale Mazoyer

doi:10.1109/IMW.2010.5488401

Design of TAS-MRAM prototype for NV embedded memory applications

Sumanta Chaudhuri
, Weisheng Zhao
, Jacques Olivier Klein
, Claude Chappert
, Pascale Mazoyer

Université Paris-Saclay
CNRS
STMicroelectronics SA, France

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations have been done to demonstrate the expected performances; a 128Kb prototype has been developed to validate experimentally the new design by means of standard cell and automatic macro generation techniques.

langue originale	Anglais
titre	2010 IEEE International Memory Workshop, IMW 2010
Les DOIs	https://doi.org/10.1109/IMW.2010.5488401
état	Publié - 20 oct. 2010
Evénement	2010 IEEE International Memory Workshop, IMW 2010 - Seoul, Corée du Sud Durée: 16 mai 2010 → 19 mai 2010

Série de publications

Nom	2010 IEEE International Memory Workshop, IMW 2010

Une conférence

Une conférence	2010 IEEE International Memory Workshop, IMW 2010
Pays/Territoire	Corée du Sud
La ville	Seoul
période	16/05/10 → 19/05/10

Accès au document

10.1109/IMW.2010.5488401

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@inproceedings{520ab2e7670b408788a9046325223156,

title = "Design of TAS-MRAM prototype for NV embedded memory applications",

abstract = "In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations have been done to demonstrate the expected performances; a 128Kb prototype has been developed to validate experimentally the new design by means of standard cell and automatic macro generation techniques.",

author = "Sumanta Chaudhuri and Weisheng Zhao and Klein, \{Jacques Olivier\} and Claude Chappert and Pascale Mazoyer",

year = "2010",

month = oct,

day = "20",

doi = "10.1109/IMW.2010.5488401",

language = "English",

isbn = "9781424467211",

series = "2010 IEEE International Memory Workshop, IMW 2010",

booktitle = "2010 IEEE International Memory Workshop, IMW 2010",

note = "2010 IEEE International Memory Workshop, IMW 2010 ; Conference date: 16-05-2010 Through 19-05-2010",

}

Chaudhuri, S, Zhao, W, Klein, JO, Chappert, C & Mazoyer, P 2010, Design of TAS-MRAM prototype for NV embedded memory applications. Dans 2010 IEEE International Memory Workshop, IMW 2010., 5488401, 2010 IEEE International Memory Workshop, IMW 2010, 2010 IEEE International Memory Workshop, IMW 2010, Seoul, Corée du Sud, 16/05/10. https://doi.org/10.1109/IMW.2010.5488401

Design of TAS-MRAM prototype for NV embedded memory applications. / Chaudhuri, Sumanta; Zhao, Weisheng; Klein, Jacques Olivier et al.
2010 IEEE International Memory Workshop, IMW 2010. 2010. 5488401 (2010 IEEE International Memory Workshop, IMW 2010).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Design of TAS-MRAM prototype for NV embedded memory applications

AU - Chaudhuri, Sumanta

AU - Zhao, Weisheng

AU - Klein, Jacques Olivier

AU - Chappert, Claude

AU - Mazoyer, Pascale

PY - 2010/10/20

Y1 - 2010/10/20

N2 - In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations have been done to demonstrate the expected performances; a 128Kb prototype has been developed to validate experimentally the new design by means of standard cell and automatic macro generation techniques.

AB - In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations have been done to demonstrate the expected performances; a 128Kb prototype has been developed to validate experimentally the new design by means of standard cell and automatic macro generation techniques.

UR - https://www.scopus.com/pages/publications/77957916645

U2 - 10.1109/IMW.2010.5488401

DO - 10.1109/IMW.2010.5488401

M3 - Conference contribution

AN - SCOPUS:77957916645

SN - 9781424467211

T3 - 2010 IEEE International Memory Workshop, IMW 2010

BT - 2010 IEEE International Memory Workshop, IMW 2010

T2 - 2010 IEEE International Memory Workshop, IMW 2010

Y2 - 16 May 2010 through 19 May 2010

ER -

Design of TAS-MRAM prototype for NV embedded memory applications

Résumé

Série de publications

Une conférence

Accès au document

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