Detection of Ga vacancies in electron irradiated GaAs by positrons

P. Hautojärvi; P. Moser; M. Stucky; C. Corbel; F. Plazaola

doi:10.1063/1.96677

Detection of Ga vacancies in electron irradiated GaAs by positrons

P. Hautojärvi
, P. Moser
, M. Stucky
, C. Corbel
, F. Plazaola

Service de Physique 85 X
Institut Pierre Simon Laplace, CNRS and CEA
Aalto University

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.

langue originale	Anglais
Pages (de - à)	809-810
Nombre de pages	2
journal	Applied Physics Letters
Volume	48
Numéro de publication	12
Les DOIs	https://doi.org/10.1063/1.96677
état	Publié - 1 déc. 1986
Modification externe	Oui

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10.1063/1.96677

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title = "Detection of Ga vacancies in electron irradiated GaAs by positrons",

abstract = "Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.",

author = "P. Hautoj{\"a}rvi and P. Moser and M. Stucky and C. Corbel and F. Plazaola",

year = "1986",

month = dec,

day = "1",

doi = "10.1063/1.96677",

language = "English",

volume = "48",

pages = "809--810",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Detection of Ga vacancies in electron irradiated GaAs by positrons

AU - Hautojärvi, P.

AU - Moser, P.

AU - Stucky, M.

AU - Corbel, C.

AU - Plazaola, F.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.

AB - Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.

UR - https://www.scopus.com/pages/publications/0009088161

U2 - 10.1063/1.96677

DO - 10.1063/1.96677

M3 - Article

AN - SCOPUS:0009088161

SN - 0003-6951

VL - 48

SP - 809

EP - 810

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Detection of Ga vacancies in electron irradiated GaAs by positrons

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