Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

J. P. Kleider; A. S. Gudovskikh; P. Roca I Cabarrocas

doi:10.1063/1.2907695

Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

J. P. Kleider
, A. S. Gudovskikh
, P. Roca I Cabarrocas

Université Paris-Sud 11
Institute of Bioorganic Chemistry

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The presence of an electron rich inversion layer in p -type crystalline silicon (c-Si) at the interface with n -type hydrogenated amorphous silicon (a-Si:H) is experimentally demonstrated from the coplanar conductance of (n) a-Si:H (p) c-Si structures, which is shown to be very sensitive to the band mismatch between the two semiconductors. The temperature dependence of the corresponding sheet electron density allows to determine with a very good precision the conduction band offset Δ EC between a-Si:H and c-Si:Δ EC =0.15±0.04 eV.

langue originale	Anglais
Numéro d'article	162101
journal	Applied Physics Letters
Volume	92
Numéro de publication	16
Les DOIs	https://doi.org/10.1063/1.2907695
état	Publié - 1 mai 2008

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10.1063/1.2907695

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title = "Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements",

abstract = "The presence of an electron rich inversion layer in p -type crystalline silicon (c-Si) at the interface with n -type hydrogenated amorphous silicon (a-Si:H) is experimentally demonstrated from the coplanar conductance of (n) a-Si:H (p) c-Si structures, which is shown to be very sensitive to the band mismatch between the two semiconductors. The temperature dependence of the corresponding sheet electron density allows to determine with a very good precision the conduction band offset Δ EC between a-Si:H and c-Si:Δ EC =0.15±0.04 eV.",

author = "Kleider, \{J. P.\} and Gudovskikh, \{A. S.\} and \{Roca I Cabarrocas\}, P.",

year = "2008",

month = may,

day = "1",

doi = "10.1063/1.2907695",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements. / Kleider, J. P.; Gudovskikh, A. S.; Roca I Cabarrocas, P.
Dans: Applied Physics Letters, Vol 92, Numéro 16, 162101, 01.05.2008.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

AU - Kleider, J. P.

AU - Gudovskikh, A. S.

AU - Roca I Cabarrocas, P.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - The presence of an electron rich inversion layer in p -type crystalline silicon (c-Si) at the interface with n -type hydrogenated amorphous silicon (a-Si:H) is experimentally demonstrated from the coplanar conductance of (n) a-Si:H (p) c-Si structures, which is shown to be very sensitive to the band mismatch between the two semiconductors. The temperature dependence of the corresponding sheet electron density allows to determine with a very good precision the conduction band offset Δ EC between a-Si:H and c-Si:Δ EC =0.15±0.04 eV.

AB - The presence of an electron rich inversion layer in p -type crystalline silicon (c-Si) at the interface with n -type hydrogenated amorphous silicon (a-Si:H) is experimentally demonstrated from the coplanar conductance of (n) a-Si:H (p) c-Si structures, which is shown to be very sensitive to the band mismatch between the two semiconductors. The temperature dependence of the corresponding sheet electron density allows to determine with a very good precision the conduction band offset Δ EC between a-Si:H and c-Si:Δ EC =0.15±0.04 eV.

U2 - 10.1063/1.2907695

DO - 10.1063/1.2907695

M3 - Article

AN - SCOPUS:42549164617

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162101

ER -

Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements

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