Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique

S. Hamma; P. Roca I Cabarrocas

doi:10.1063/1.124110

Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique

S. Hamma
, P. Roca I Cabarrocas

Institut polytechnique de Paris

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

A method to determine the mobility gap of thin films and the band discontinuities in heterojunctions is presented. It combines in situ contact potential measurements with dark conductivity activation energy measurements. The method is applied to determine the mobility gap of microcrystalline silicon (μc-Si:H) and the band discontinuities at the μc-Si:H/amorphous silicon (a-Si:H) interface. The mobility gap of μc-Si:H depends on its crystalline volume fraction and varies between 1.48 and 1.55 eV. The main band discontinuity occurs at the valence band side. The consequences of the band discontinuities on a-Si:H based solar cells using μc-Si:H doped layers are discussed.

langue originale	Anglais
Pages (de - à)	3218-3220
Nombre de pages	3
journal	Applied Physics Letters
Volume	74
Numéro de publication	21
Les DOIs	https://doi.org/10.1063/1.124110
état	Publié - 24 mai 1999

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10.1063/1.124110

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title = "Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique",

abstract = "A method to determine the mobility gap of thin films and the band discontinuities in heterojunctions is presented. It combines in situ contact potential measurements with dark conductivity activation energy measurements. The method is applied to determine the mobility gap of microcrystalline silicon (μc-Si:H) and the band discontinuities at the μc-Si:H/amorphous silicon (a-Si:H) interface. The mobility gap of μc-Si:H depends on its crystalline volume fraction and varies between 1.48 and 1.55 eV. The main band discontinuity occurs at the valence band side. The consequences of the band discontinuities on a-Si:H based solar cells using μc-Si:H doped layers are discussed.",

author = "S. Hamma and \{Roca I Cabarrocas\}, P.",

year = "1999",

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doi = "10.1063/1.124110",

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Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique. / Hamma, S.; Roca I Cabarrocas, P.
Dans: Applied Physics Letters, Vol 74, Numéro 21, 24.05.1999, p. 3218-3220.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique

AU - Hamma, S.

AU - Roca I Cabarrocas, P.

PY - 1999/5/24

Y1 - 1999/5/24

N2 - A method to determine the mobility gap of thin films and the band discontinuities in heterojunctions is presented. It combines in situ contact potential measurements with dark conductivity activation energy measurements. The method is applied to determine the mobility gap of microcrystalline silicon (μc-Si:H) and the band discontinuities at the μc-Si:H/amorphous silicon (a-Si:H) interface. The mobility gap of μc-Si:H depends on its crystalline volume fraction and varies between 1.48 and 1.55 eV. The main band discontinuity occurs at the valence band side. The consequences of the band discontinuities on a-Si:H based solar cells using μc-Si:H doped layers are discussed.

AB - A method to determine the mobility gap of thin films and the band discontinuities in heterojunctions is presented. It combines in situ contact potential measurements with dark conductivity activation energy measurements. The method is applied to determine the mobility gap of microcrystalline silicon (μc-Si:H) and the band discontinuities at the μc-Si:H/amorphous silicon (a-Si:H) interface. The mobility gap of μc-Si:H depends on its crystalline volume fraction and varies between 1.48 and 1.55 eV. The main band discontinuity occurs at the valence band side. The consequences of the band discontinuities on a-Si:H based solar cells using μc-Si:H doped layers are discussed.

U2 - 10.1063/1.124110

DO - 10.1063/1.124110

M3 - Article

AN - SCOPUS:0000433107

SN - 0003-6951

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SP - 3218

EP - 3220

JO - Applied Physics Letters

JF - Applied Physics Letters

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