Development and verification of a new non-linear MOSFET model

Haroun Romdane; Eric Bergeault; Bernard Huyart

Development and verification of a new non-linear MOSFET model

Haroun Romdane
, Eric Bergeault
, Bernard Huyart

ENST
CNRS

Résultats de recherche: Contribution à une conférence › Papier › Revue par des pairs

1 Citation (Scopus)

Résumé

A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on wafer measurements of S parameters at a typical bias point.

langue originale	Anglais
Pages	487-489
Nombre de pages	3
état	Publié - 1 janv. 2002
Evénement	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, États-Unis Durée: 2 juin 2002 → 4 juin 2002

Une conférence

Une conférence	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Pays/Territoire	États-Unis
La ville	Seatle, WA
période	2/06/02 → 4/06/02

Contient cette citation

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title = "Development and verification of a new non-linear MOSFET model",

abstract = "A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on wafer measurements of S parameters at a typical bias point.",

author = "Haroun Romdane and Eric Bergeault and Bernard Huyart",

year = "2002",

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note = "2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 02-06-2002 Through 04-06-2002",

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T1 - Development and verification of a new non-linear MOSFET model

AU - Romdane, Haroun

AU - Bergeault, Eric

AU - Huyart, Bernard

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on wafer measurements of S parameters at a typical bias point.

AB - A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on wafer measurements of S parameters at a typical bias point.

M3 - Paper

AN - SCOPUS:0036316920

SP - 487

EP - 489

T2 - 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 2 June 2002 through 4 June 2002

ER -

Development and verification of a new non-linear MOSFET model

Résumé

Une conférence

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Contient cette citation