Development of a magnetic tunnel transistor based on a double tunnel junction

G. Rodary; M. Hehn; T. Dimopoulos; D. Lacour; J. Bangert; H. Jaffrès; F. Montaigne; F. Nguyen Van Dau; F. Petroff; A. Schuhl; J. Wecker

doi:10.1016/j.jmmm.2004.11.464

Development of a magnetic tunnel transistor based on a double tunnel junction

G. Rodary
, M. Hehn
, T. Dimopoulos
, D. Lacour
, J. Bangert
, H. Jaffrès
, F. Montaigne
, F. Nguyen Van Dau
, F. Petroff
, A. Schuhl
, J. Wecker

U. Mixte de Physique CNRS/Thales
Univ.́ Henri Poincaré
Siemens AG

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

5 Citations (Scopus)

Résumé

We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.

langue originale	Anglais
Pages (de - à)	1097-1099
Nombre de pages	3
journal	Journal of Magnetism and Magnetic Materials
Volume	290-291 PART 2
Les DOIs	https://doi.org/10.1016/j.jmmm.2004.11.464
état	Publié - 1 avr. 2005
Modification externe	Oui

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10.1016/j.jmmm.2004.11.464

Contient cette citation

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title = "Development of a magnetic tunnel transistor based on a double tunnel junction",

abstract = "We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.",

keywords = "Magnetoresistance-multilayers, Transport properties, Tunneling",

author = "G. Rodary and M. Hehn and T. Dimopoulos and D. Lacour and J. Bangert and H. Jaffr{\`e}s and F. Montaigne and \{Van Dau\}, \{F. Nguyen\} and F. Petroff and A. Schuhl and J. Wecker",

year = "2005",

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doi = "10.1016/j.jmmm.2004.11.464",

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TY - JOUR

T1 - Development of a magnetic tunnel transistor based on a double tunnel junction

AU - Rodary, G.

AU - Hehn, M.

AU - Dimopoulos, T.

AU - Lacour, D.

AU - Bangert, J.

AU - Jaffrès, H.

AU - Montaigne, F.

AU - Van Dau, F. Nguyen

AU - Petroff, F.

AU - Schuhl, A.

AU - Wecker, J.

PY - 2005/4/1

Y1 - 2005/4/1

N2 - We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.

AB - We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.

KW - Magnetoresistance-multilayers

KW - Transport properties

KW - Tunneling

U2 - 10.1016/j.jmmm.2004.11.464

DO - 10.1016/j.jmmm.2004.11.464

M3 - Article

AN - SCOPUS:20144372908

SN - 0304-8853

VL - 290-291 PART 2

SP - 1097

EP - 1099

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

Development of a magnetic tunnel transistor based on a double tunnel junction

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