TY - GEN
T1 - DFB lasers for sensing applications in the 3.0-3.5 um wavelength range
AU - Fischer, Marc O.
AU - Von Edlinger, Michael
AU - Nähle, Lars
AU - Koeth, Johannes
AU - Bauer, Adam
AU - Dallner, M.
AU - Höfling, Sven
AU - Worschech, Lukas
AU - Forchel, Alfred W.B.
AU - Belahsene, Sofiane
AU - Rouillard, Yves
PY - 2011/5/13
Y1 - 2011/5/13
N2 - There are two particularly promising approaches to reach laser emission in the 3.0 - 3.5 μm wavelength range with application grade performance; GaSb based laser structures using GaInAsSb / AlGaInAsSb type-I quantum well (QW) active region, as well as type-II interband cascade (IC) material have been investigated and corresponding results are discussed in this paper. We also present different techniques for the fabrication of spectrally monomode distributed feedback (DFB) lasers for sensing applications in the targeted wavelength range. Based on the different waveguide designs of the two material approaches, different concepts to achieve monomode emission were applied: lateral metal gratings were used for type-I laser structures, vertical sidewall gratings for ICL designs. The fabrication procedure, including growth of the laser structures by molecular beam epitaxy, device processing and characterization, are described in the following. DFB emission under continuous wave (cw) operation was achieved up to room temperature (RT) in the target wavelength range. Sidemode suppression ratios (SMSRs) exceed 30dB for the fabricated devices and mode-hop free monomode tuning ranges of several nanometers are demonstrated.
AB - There are two particularly promising approaches to reach laser emission in the 3.0 - 3.5 μm wavelength range with application grade performance; GaSb based laser structures using GaInAsSb / AlGaInAsSb type-I quantum well (QW) active region, as well as type-II interband cascade (IC) material have been investigated and corresponding results are discussed in this paper. We also present different techniques for the fabrication of spectrally monomode distributed feedback (DFB) lasers for sensing applications in the targeted wavelength range. Based on the different waveguide designs of the two material approaches, different concepts to achieve monomode emission were applied: lateral metal gratings were used for type-I laser structures, vertical sidewall gratings for ICL designs. The fabrication procedure, including growth of the laser structures by molecular beam epitaxy, device processing and characterization, are described in the following. DFB emission under continuous wave (cw) operation was achieved up to room temperature (RT) in the target wavelength range. Sidemode suppression ratios (SMSRs) exceed 30dB for the fabricated devices and mode-hop free monomode tuning ranges of several nanometers are demonstrated.
KW - DISTRIBUTED FEEDBACK LASERS
KW - GALLIUM ANTIMONIDE
KW - GAS SENSORS
KW - INFRARED SOURCES
KW - INTERBAND CASCADE LASERS
KW - MOLECULAR BEAM EPITAXY
KW - QUANTUM WELL LASERS
KW - SEMICONDUCTOR LASERS
UR - https://www.scopus.com/pages/publications/79955748592
U2 - 10.1117/12.871411
DO - 10.1117/12.871411
M3 - Conference contribution
AN - SCOPUS:79955748592
SN - 9780819484826
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Quantum Sensing and Nanophotonic Devices VIII
T2 - Quantum Sensing and Nanophotonic Devices VIII
Y2 - 23 January 2011 through 27 January 2011
ER -