@inproceedings{a6a185cf5c5e4032ba9aa092f9ad222d,
title = "Direct band gap germanium",
abstract = "We show that direct band gap germanium can be obtained with external silicon nitride stressor layers. The cross-over from indirect to direct band gap is found to occur for an equivalent 1.67\% biaxial tensile strain. Both whispering gallery modes and quasiradial modes are observed with tensile-strained Ge microdisks. Quality factors up to 7100 have been measured around 2 μm wavelength. We demonstrate that circular Bragg reflectors can significantly enhance the quality factors of quasi-radial modes in strained germanium microdisks.",
author = "A. Elbaz and \{El Kurdi\}, M. and M. Prost and A. Ghrib and S. Sauvage and X. Checoury and F. Aniel and N. Zerounian and G. Picardi and R. Ossikovski and G. Beaudoin and I. Sagnes and F. Boeuf and P. Boucaud",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",
year = "2016",
month = jan,
day = "1",
doi = "10.1149/07508.0177ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "8",
pages = "177--184",
editor = "J. Murota and B. Tillack and M. Caymax and G. Masini and Harame, \{D. L.\} and S. Miyazaki",
booktitle = "SiGe, Ge, and Related Materials",
edition = "8",
}