Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition

G. Niu; W. W. Peng; G. Saint-Girons; J. Penuelas; P. Roy; J. B. Brubach; J. L. Maurice; G. Hollinger; B. Vilquin

doi:10.1016/j.tsf.2010.12.208

Direct epitaxial growth of SrTiO₃ on Si (001): Interface, crystallization and IR evidence of phase transition

G. Niu
, W. W. Peng
, G. Saint-Girons
, J. Penuelas
, P. Roy
, J. B. Brubach
, J. L. Maurice
, G. Hollinger
, B. Vilquin

LTDS UMR 5513 - Ecole Centrale de Lyon
Synchrotron SOLEIL
Unité Mixte de Physique CNRS/Thales

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The work reports the direct epitaxial growth of SrTiO₃ on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5 × 10^{- 8} Torr to achieve a high-quality single crystalline SrTiO₃ film and a coherent interface between SrTiO₃ and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO₃ commensurately grown on silicon undergoes a cubic-tetragonal phase transition.

langue originale	Anglais
Pages (de - à)	5722-5725
Nombre de pages	4
journal	Thin Solid Films
Volume	519
Numéro de publication	17
Les DOIs	https://doi.org/10.1016/j.tsf.2010.12.208
état	Publié - 30 juin 2011

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10.1016/j.tsf.2010.12.208

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title = "Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition",

abstract = "The work reports the direct epitaxial growth of SrTiO3 on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5 × 10- 8 Torr to achieve a high-quality single crystalline SrTiO3 film and a coherent interface between SrTiO3 and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO3 commensurately grown on silicon undergoes a cubic-tetragonal phase transition.",

author = "G. Niu and Peng, \{W. W.\} and G. Saint-Girons and J. Penuelas and P. Roy and Brubach, \{J. B.\} and Maurice, \{J. L.\} and G. Hollinger and B. Vilquin",

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T1 - Direct epitaxial growth of SrTiO3 on Si (001)

T2 - Interface, crystallization and IR evidence of phase transition

AU - Niu, G.

AU - Peng, W. W.

AU - Saint-Girons, G.

AU - Penuelas, J.

AU - Roy, P.

AU - Brubach, J. B.

AU - Maurice, J. L.

AU - Hollinger, G.

AU - Vilquin, B.

PY - 2011/6/30

Y1 - 2011/6/30

N2 - The work reports the direct epitaxial growth of SrTiO3 on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5 × 10- 8 Torr to achieve a high-quality single crystalline SrTiO3 film and a coherent interface between SrTiO3 and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO3 commensurately grown on silicon undergoes a cubic-tetragonal phase transition.

AB - The work reports the direct epitaxial growth of SrTiO3 on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5 × 10- 8 Torr to achieve a high-quality single crystalline SrTiO3 film and a coherent interface between SrTiO3 and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO3 commensurately grown on silicon undergoes a cubic-tetragonal phase transition.

UR - https://www.scopus.com/pages/publications/79957999912

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DO - 10.1016/j.tsf.2010.12.208

M3 - Article

AN - SCOPUS:79957999912

SN - 0040-6090

VL - 519

SP - 5722

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