Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells

G. Hamon; J. Decobert; N. Vaissiere; R. Lachaume; R. Cariou; W. Chen; J. Alvarez; N. Habka; J. P. Kleider; P. RocaCabarrocas

doi:10.1109/PVSC.2016.7749951

Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells

G. Hamon
, J. Decobert
, N. Vaissiere
, R. Lachaume
, R. Cariou
, W. Chen
, J. Alvarez
, N. Habka
, J. P. Kleider
, P. RocaCabarrocas

Total
Alcatel-Thales III-V Laboratory
Université Paris-Saclay
Université Paris-Sud 11

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

1 Citation (Scopus)

Résumé

Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si_1-xGe_x). The choice of Al_yGa_1-yAs as the top material is justified because it provides the optimum bandgap combination with Si_1-xGe_x (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.

langue originale	Anglais
titre	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	1895-1897
Nombre de pages	3
ISBN (Electronique)	9781509027248
Les DOIs	https://doi.org/10.1109/PVSC.2016.7749951
état	Publié - 18 nov. 2016
Modification externe	Oui
Evénement	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, États-Unis Durée: 5 juin 2016 → 10 juin 2016

Série de publications

Nom	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (imprimé)	0160-8371

Une conférence

Une conférence	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Pays/Territoire	États-Unis
La ville	Portland
période	5/06/16 → 10/06/16

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/PVSC.2016.7749951

Contient cette citation

Hamon, G., Decobert, J., Vaissiere, N., Lachaume, R., Cariou, R., Chen, W., Alvarez, J., Habka, N., Kleider, J. P., & RocaCabarrocas, P. (2016). Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells. Dans 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (p. 1895-1897). Article 7749951 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749951

Hamon, G. ; Decobert, J. ; Vaissiere, N. et al. / Direct growth of crystalline silicon on GaAs by low temperature PECVD : Towards hybrid tunnel junctions for III-V/Si tandem cells. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1895-1897 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells",

abstract = "Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si1-xGex). The choice of AlyGa1-yAs as the top material is justified because it provides the optimum bandgap combination with Si1-xGex (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42\% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.",

keywords = "Epitaxy, GaAs, III-V, PECVD, Photovoltaic cells, Silicon, Tandem, Tunnel Junction",

author = "G. Hamon and J. Decobert and N. Vaissiere and R. Lachaume and R. Cariou and W. Chen and J. Alvarez and N. Habka and Kleider, \{J. P.\} and P. RocaCabarrocas",

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doi = "10.1109/PVSC.2016.7749951",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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Hamon, G, Decobert, J, Vaissiere, N, Lachaume, R, Cariou, R, Chen, W, Alvarez, J, Habka, N, Kleider, JP & RocaCabarrocas, P 2016, Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells. Dans 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749951, Conference Record of the IEEE Photovoltaic Specialists Conference, VOL. 2016-November, Institute of Electrical and Electronics Engineers Inc., p. 1895-1897, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, États-Unis, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749951

Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells. / Hamon, G.; Decobert, J.; Vaissiere, N. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1895-1897 7749951 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol 2016-November).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Direct growth of crystalline silicon on GaAs by low temperature PECVD

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

AU - Hamon, G.

AU - Decobert, J.

AU - Vaissiere, N.

AU - Lachaume, R.

AU - Cariou, R.

AU - Chen, W.

AU - Alvarez, J.

AU - Habka, N.

AU - Kleider, J. P.

AU - RocaCabarrocas, P.

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si1-xGex). The choice of AlyGa1-yAs as the top material is justified because it provides the optimum bandgap combination with Si1-xGex (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.

AB - Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si1-xGex). The choice of AlyGa1-yAs as the top material is justified because it provides the optimum bandgap combination with Si1-xGex (1.63 eV/0.96 eV), with theoretical efficiencies in excess of 42% for such a tandem configuration. In our inverted metamorphic approach, we first use MOVPE to grow the AlGaAs top cell on a lattice matched GaAs substrate, and then perform low temperature PECVD heteroepitaxial SiGe on top. We show here the first structural and electrical characterizations of Si(PECVD)/III-V(MOVPE) interfaces. Furthermore, the epitaxial growth of highly doped crystalline Si by low-temperature PECVD on GaAs enables us to fabricate hybrid tunnel junctions with low resistivity and a high current, suitable to interconnect the two subcells in the tandem III-V/Si solar cell.

KW - Epitaxy

KW - GaAs

KW - III-V

KW - PECVD

KW - Photovoltaic cells

KW - Silicon

KW - Tandem

KW - Tunnel Junction

U2 - 10.1109/PVSC.2016.7749951

DO - 10.1109/PVSC.2016.7749951

M3 - Conference contribution

AN - SCOPUS:85003601527

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1895

EP - 1897

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 5 June 2016 through 10 June 2016

ER -

Hamon G, Decobert J, Vaissiere N, Lachaume R, Cariou R, Chen W et al. Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells. Dans 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1895-1897. 7749951. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749951

Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells

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SDG des Nations Unies

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