Direct imaging of boron segregation to extended defects in silicon

S. Duguay; T. Philippe; F. Cristiano; D. Blavette

doi:10.1063/1.3526376

Direct imaging of boron segregation to extended defects in silicon

S. Duguay
, T. Philippe
, F. Cristiano
, D. Blavette

INSA Rouen Normandie
Université Paul Sabatier
Institut Universitaire de France

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Silicon was implanted with a high boron dose (5× 1015 at. cm-2) at 30 keV and further annealed at 950 °C for 30 s. The sample was analyzed using transmission electron microscopy (TEM) and atom probe tomography (APT). TEM images revealed the presence of a high density of dislocation loops (∼ 1011 / cm-2) distributed around the projected range of implanted atoms. APT reconstructions showed local enrichment of boron in the form of loops that were interpreted as Cottrell atmosphere. Boron enriched rods, interpreted as the {113} defects, were also observed. Segregation energies of boron atoms to these defects were estimated to be ∼0.35 eV.

langue originale	Anglais
Numéro d'article	242104
journal	Applied Physics Letters
Volume	97
Numéro de publication	24
Les DOIs	https://doi.org/10.1063/1.3526376
état	Publié - 13 déc. 2010
Modification externe	Oui

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10.1063/1.3526376

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title = "Direct imaging of boron segregation to extended defects in silicon",

abstract = "Silicon was implanted with a high boron dose (5× 1015 at. cm-2) at 30 keV and further annealed at 950 °C for 30 s. The sample was analyzed using transmission electron microscopy (TEM) and atom probe tomography (APT). TEM images revealed the presence of a high density of dislocation loops (∼ 1011 / cm-2) distributed around the projected range of implanted atoms. APT reconstructions showed local enrichment of boron in the form of loops that were interpreted as Cottrell atmosphere. Boron enriched rods, interpreted as the \{113\} defects, were also observed. Segregation energies of boron atoms to these defects were estimated to be ∼0.35 eV.",

author = "S. Duguay and T. Philippe and F. Cristiano and D. Blavette",

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AU - Duguay, S.

AU - Philippe, T.

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AU - Blavette, D.

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N2 - Silicon was implanted with a high boron dose (5× 1015 at. cm-2) at 30 keV and further annealed at 950 °C for 30 s. The sample was analyzed using transmission electron microscopy (TEM) and atom probe tomography (APT). TEM images revealed the presence of a high density of dislocation loops (∼ 1011 / cm-2) distributed around the projected range of implanted atoms. APT reconstructions showed local enrichment of boron in the form of loops that were interpreted as Cottrell atmosphere. Boron enriched rods, interpreted as the {113} defects, were also observed. Segregation energies of boron atoms to these defects were estimated to be ∼0.35 eV.

AB - Silicon was implanted with a high boron dose (5× 1015 at. cm-2) at 30 keV and further annealed at 950 °C for 30 s. The sample was analyzed using transmission electron microscopy (TEM) and atom probe tomography (APT). TEM images revealed the presence of a high density of dislocation loops (∼ 1011 / cm-2) distributed around the projected range of implanted atoms. APT reconstructions showed local enrichment of boron in the form of loops that were interpreted as Cottrell atmosphere. Boron enriched rods, interpreted as the {113} defects, were also observed. Segregation energies of boron atoms to these defects were estimated to be ∼0.35 eV.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242104

ER -

Direct imaging of boron segregation to extended defects in silicon

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