Discrimination of carrier conduction mechanisms of InP/InGaAsP/InAs/InP laser structure Through J-V-T measurements

The properties of InP/InGaAsP/InAs/InP laser structure, mainly used in the fiber optic telecommunication industry, were investigated through current density-voltage- temperature ( J - V- T ) measurement within dark and light conditions. Tunneling and generation-recombination carrier conduction mechanisms were identified within a junction bias voltage of 0-0.6 V. Above 0.6 V, Poole-Frenkel was the actual path in conduction and the mobility of carrier was determined quantitatively by means of temperature-dependent J- V curves in the space charge bias region. A thermal energy gap of 0.8 eV corresponded to the band gap of quantum dashes in which radiative recombination took place to emit a laser light at 1550 nm.