Distributed and coupled electrothermal model of power semiconductor devices

G. Belkacem; D. Labrousse; S. Lefebvre; P. Y. Joubert; U. Kuhne; L. Fribourg; R. Soulat; E. Florentin; C. Rey

doi:10.1109/REVET.2012.6195253

Distributed and coupled electrothermal model of power semiconductor devices

G. Belkacem
, D. Labrousse
, S. Lefebvre
, P. Y. Joubert
, U. Kuhne
, L. Fribourg
, R. Soulat
, E. Florentin
, C. Rey

Paris-Saclay University
Université Paris
LSV - ENS Cachan
MSSMat, UMR 8579 CNRS-Ecole Centrale Paris, Grande Voie des Vignes

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.

langue originale	Anglais
titre	2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
Pages	84-89
Nombre de pages	6
Les DOIs	https://doi.org/10.1109/REVET.2012.6195253
état	Publié - 24 mai 2012
Modification externe	Oui
Evénement	2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 - Nabeul, Tunisie Durée: 26 mars 2012 → 28 mars 2012

Série de publications

Nom	2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

Une conférence

Une conférence	2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
Pays/Territoire	Tunisie
La ville	Nabeul
période	26/03/12 → 28/03/12

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/REVET.2012.6195253

Contient cette citation

Belkacem, G., Labrousse, D., Lefebvre, S., Joubert, P. Y., Kuhne, U., Fribourg, L., Soulat, R., Florentin, E., & Rey, C. (2012). Distributed and coupled electrothermal model of power semiconductor devices. Dans 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 (p. 84-89). Article 6195253 (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012). https://doi.org/10.1109/REVET.2012.6195253

@inproceedings{f43d74caa11b4f30b33f085fb84b4ef0,

title = "Distributed and coupled electrothermal model of power semiconductor devices",

abstract = "Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS{\texttrademark}) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.",

keywords = "Ageing of power semiconductor devices, Degradation of the metallization layer, Electro-thermal model, Power semiconductor transistors, Short circuit",

author = "G. Belkacem and D. Labrousse and S. Lefebvre and Joubert, \{P. Y.\} and U. Kuhne and L. Fribourg and R. Soulat and E. Florentin and C. Rey",

year = "2012",

month = may,

day = "24",

doi = "10.1109/REVET.2012.6195253",

language = "English",

isbn = "9781467311687",

series = "2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012",

pages = "84--89",

booktitle = "2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012",

note = "2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 ; Conference date: 26-03-2012 Through 28-03-2012",

}

Belkacem, G, Labrousse, D, Lefebvre, S, Joubert, PY, Kuhne, U, Fribourg, L, Soulat, R, Florentin, E & Rey, C 2012, Distributed and coupled electrothermal model of power semiconductor devices. Dans 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012., 6195253, 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012, p. 84-89, 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012, Nabeul, Tunisie, 26/03/12. https://doi.org/10.1109/REVET.2012.6195253

Distributed and coupled electrothermal model of power semiconductor devices. / Belkacem, G.; Labrousse, D.; Lefebvre, S. et al.
2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012. 2012. p. 84-89 6195253 (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Distributed and coupled electrothermal model of power semiconductor devices

AU - Belkacem, G.

AU - Labrousse, D.

AU - Lefebvre, S.

AU - Joubert, P. Y.

AU - Kuhne, U.

AU - Fribourg, L.

AU - Soulat, R.

AU - Florentin, E.

AU - Rey, C.

PY - 2012/5/24

Y1 - 2012/5/24

N2 - Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.

AB - Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.

KW - Ageing of power semiconductor devices

KW - Degradation of the metallization layer

KW - Electro-thermal model

KW - Power semiconductor transistors

KW - Short circuit

U2 - 10.1109/REVET.2012.6195253

DO - 10.1109/REVET.2012.6195253

M3 - Conference contribution

AN - SCOPUS:84862094270

SN - 9781467311687

T3 - 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

SP - 84

EP - 89

BT - 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

T2 - 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

Y2 - 26 March 2012 through 28 March 2012

ER -

Belkacem G, Labrousse D, Lefebvre S, Joubert PY, Kuhne U, Fribourg L et al. Distributed and coupled electrothermal model of power semiconductor devices. Dans 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012. 2012. p. 84-89. 6195253. (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012). doi: 10.1109/REVET.2012.6195253

Distributed and coupled electrothermal model of power semiconductor devices

Résumé

Série de publications

Une conférence

SDG des Nations Unies

Accès au document

Empreinte digitale

Contient cette citation