Dynamic properties of InAsInP (311)B quantum dot Fabry-Perot lasers emitting at 1.52 μm

A. Martinez; K. Merghem; S. Bouchoule; G. Moreau; A. Ramdane; J. G. Provost; F. Alexandre; F. Grillot; O. Dehaese; R. Piron; S. Loualiche

doi:10.1063/1.2957479

Dynamic properties of InAsInP (311)B quantum dot Fabry-Perot lasers emitting at 1.52 μm

A. Martinez
, K. Merghem
, S. Bouchoule
, G. Moreau
, A. Ramdane
, J. G. Provost
, F. Alexandre
, F. Grillot
, O. Dehaese
, R. Piron
, S. Loualiche

Centre de Nanosciences et de Nanotechnologies
Alcatel-Thales III-V Laboratory
INSA Rennes

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

41 Citations (Scopus)

Résumé

Dynamic properties of truly three-dimensional-confined InAsInP quantum dot (QD) lasers obtained by molecular beam epitaxy growth on a (311)B oriented substrate are reported. The relative intensity noise and small signal modulation bandwidth experiments evidence maximum relaxation frequency of 3.8 GHz with a clear relaxation oscillation peak, indicating less damping than InAsGaAs QD lasers. The Henry factor amounts to ∼1.8 below threshold and increases to ∼6 above threshold, which is attributed to band filling of the thick wetting layer.

langue originale	Anglais
Numéro d'article	021101
journal	Applied Physics Letters
Volume	93
Numéro de publication	2
Les DOIs	https://doi.org/10.1063/1.2957479
état	Publié - 14 juil. 2008
Modification externe	Oui

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10.1063/1.2957479

Contient cette citation

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title = "Dynamic properties of InAsInP (311)B quantum dot Fabry-Perot lasers emitting at 1.52 μm",

abstract = "Dynamic properties of truly three-dimensional-confined InAsInP quantum dot (QD) lasers obtained by molecular beam epitaxy growth on a (311)B oriented substrate are reported. The relative intensity noise and small signal modulation bandwidth experiments evidence maximum relaxation frequency of 3.8 GHz with a clear relaxation oscillation peak, indicating less damping than InAsGaAs QD lasers. The Henry factor amounts to ∼1.8 below threshold and increases to ∼6 above threshold, which is attributed to band filling of the thick wetting layer.",

author = "A. Martinez and K. Merghem and S. Bouchoule and G. Moreau and A. Ramdane and Provost, \{J. G.\} and F. Alexandre and F. Grillot and O. Dehaese and R. Piron and S. Loualiche",

year = "2008",

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doi = "10.1063/1.2957479",

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T1 - Dynamic properties of InAsInP (311)B quantum dot Fabry-Perot lasers emitting at 1.52 μm

AU - Martinez, A.

AU - Merghem, K.

AU - Bouchoule, S.

AU - Moreau, G.

AU - Ramdane, A.

AU - Provost, J. G.

AU - Alexandre, F.

AU - Grillot, F.

AU - Dehaese, O.

AU - Piron, R.

AU - Loualiche, S.

PY - 2008/7/14

Y1 - 2008/7/14

N2 - Dynamic properties of truly three-dimensional-confined InAsInP quantum dot (QD) lasers obtained by molecular beam epitaxy growth on a (311)B oriented substrate are reported. The relative intensity noise and small signal modulation bandwidth experiments evidence maximum relaxation frequency of 3.8 GHz with a clear relaxation oscillation peak, indicating less damping than InAsGaAs QD lasers. The Henry factor amounts to ∼1.8 below threshold and increases to ∼6 above threshold, which is attributed to band filling of the thick wetting layer.

AB - Dynamic properties of truly three-dimensional-confined InAsInP quantum dot (QD) lasers obtained by molecular beam epitaxy growth on a (311)B oriented substrate are reported. The relative intensity noise and small signal modulation bandwidth experiments evidence maximum relaxation frequency of 3.8 GHz with a clear relaxation oscillation peak, indicating less damping than InAsGaAs QD lasers. The Henry factor amounts to ∼1.8 below threshold and increases to ∼6 above threshold, which is attributed to band filling of the thick wetting layer.

U2 - 10.1063/1.2957479

DO - 10.1063/1.2957479

M3 - Article

AN - SCOPUS:47549112460

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021101

ER -

Dynamic properties of InAsInP (311)B quantum dot Fabry-Perot lasers emitting at 1.52 μm

Résumé

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