Dynamic saturation in semiconductor optical amplifiers: Accurate model, role of carrier density, and slow light

Perrine Berger; Mehdi Alouini; Jérǒme Bourderionnet; Fabien Bretenaker; Daniel Dolfi

doi:10.1364/OE.18.000685

Dynamic saturation in semiconductor optical amplifiers: Accurate model, role of carrier density, and slow light

Perrine Berger
, Mehdi Alouini
, Jérǒme Bourderionnet
, Fabien Bretenaker
, Daniel Dolfi

Thales Research & Technology
Laboratoire Aimé Cotton
IPR (Institut de Physique de Rennes) - UMR 6251

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

15 Citations (Scopus)

Résumé

We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.

langue originale	Anglais
Pages (de - à)	685-693
Nombre de pages	9
journal	Optics Express
Volume	18
Numéro de publication	2
Les DOIs	https://doi.org/10.1364/OE.18.000685
état	Publié - 18 janv. 2010
Modification externe	Oui

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10.1364/OE.18.000685

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abstract = "We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.",

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AU - Bretenaker, Fabien

AU - Dolfi, Daniel

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AB - We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.

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Dynamic saturation in semiconductor optical amplifiers: Accurate model, role of carrier density, and slow light

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