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Dynamics of electronic states in the insulating intermediate surface phase of 1 T-TaS2

  • Laboratoire des Solides Irradiés
  • Gwangju Institute of Science and Technology
  • Max Planck Institute for the Structure and Dynamics of Matter
  • Institut des Matériaux de Nantes
  • Laboratoire de Physique des Solides
  • Université Paris-Saclay
  • Laboratory d'Optique Appliquée, ENSTA, CNRS-École Polytechnique
  • IPR (Institut de Physique de Rennes) - UMR 6251
  • Technical University Dresden
  • Synchrotron SOLEIL
  • Ulsan National Institute of Science and Technology

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS2. When heating the sample, the surface displays an intermediate insulating phase that persists for ∼10 K on top of a metallic bulk. The weaker screening of Coulomb repulsion and a stiffer charge density wave (CDW) explain such resilience of a correlated insulator in the topmost layers. Both time-resolved angle-resolved photoelectron spectroscopy and transient reflectivity are employed to investigate the dynamics of electrons and CDW collective motion. It follows that the amplitude mode is always stiffer at the surface and displays variable coupling to the Mott-Peierls band, stronger in the low-Temperature phase and weaker in the intermediate one.

langue originaleAnglais
Numéro d'article155145
journalPhysical Review B
Volume108
Numéro de publication15
Les DOIs
étatPublié - 15 oct. 2023

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