Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors

Jong Woo Jin; Jean Charles Vanel; Dmitri Daineka; Yvan Bonnassieux; Sabri Janfaoui; Khalid Kandoussi; Nathalie Coulon; Tayeb Mohammed-Brahim

Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors

Jong Woo Jin
, Jean Charles Vanel
, Dmitri Daineka
, Yvan Bonnassieux
, Sabri Janfaoui
, Khalid Kandoussi
, Nathalie Coulon
, Tayeb Mohammed-Brahim

Institut polytechnique de Paris
University of Rennes

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

We present the study of the dynamic response of silicon-based thin-film transistors under the voltage change, focusing on the time necessary to form the channel. Every detail of the current response-time curve is discussed by analyzing the intrinsic capacitances of thin-film transistors in on and off state and in linear and saturation mode. The method used in this work allows the visualization of the beginning of the channel conduction and the end of the channel formation process. We show the dependence of the channel creation time on geometrical parameters, applied voltage, material and structure. For this purpose, we use experimental results of the dynamic measurement and 2D finite elements simulation.

langue originale	Anglais
titre	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages	325-328
Nombre de pages	4
état	Publié - 31 oct. 2012
Evénement	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japon Durée: 4 juil. 2012 → 6 juil. 2012

Série de publications

Nom	Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Une conférence

Une conférence	19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pays/Territoire	Japon
La ville	Kyoto
période	4/07/12 → 6/07/12

Contient cette citation

Jin, J. W., Vanel, J. C., Daineka, D., Bonnassieux, Y., Janfaoui, S., Kandoussi, K., Coulon, N., & Mohammed-Brahim, T. (2012). Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors. Dans Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 (p. 325-328). Article 6294917 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Jin, Jong Woo ; Vanel, Jean Charles ; Daineka, Dmitri et al. / Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors. Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 325-328 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

@inproceedings{67fc2f4686ad4f7e93f1452661357c7d,

title = "Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors",

abstract = "We present the study of the dynamic response of silicon-based thin-film transistors under the voltage change, focusing on the time necessary to form the channel. Every detail of the current response-time curve is discussed by analyzing the intrinsic capacitances of thin-film transistors in on and off state and in linear and saturation mode. The method used in this work allows the visualization of the beginning of the channel conduction and the end of the channel formation process. We show the dependence of the channel creation time on geometrical parameters, applied voltage, material and structure. For this purpose, we use experimental results of the dynamic measurement and 2D finite elements simulation.",

author = "Jin, \{Jong Woo\} and Vanel, \{Jean Charles\} and Dmitri Daineka and Yvan Bonnassieux and Sabri Janfaoui and Khalid Kandoussi and Nathalie Coulon and Tayeb Mohammed-Brahim",

year = "2012",

month = oct,

day = "31",

language = "English",

isbn = "9781467303996",

series = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",

pages = "325--328",

booktitle = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",

note = "19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 ; Conference date: 04-07-2012 Through 06-07-2012",

}

Jin, JW, Vanel, JC, Daineka, D, Bonnassieux, Y, Janfaoui, S, Kandoussi, K, Coulon, N & Mohammed-Brahim, T 2012, Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors. Dans Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012., 6294917, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, p. 325-328, 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, Kyoto, Japon, 4/07/12.

Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors. / Jin, Jong Woo; Vanel, Jean Charles; Daineka, Dmitri et al.
Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 325-328 6294917 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors

AU - Jin, Jong Woo

AU - Vanel, Jean Charles

AU - Daineka, Dmitri

AU - Bonnassieux, Yvan

AU - Janfaoui, Sabri

AU - Kandoussi, Khalid

AU - Coulon, Nathalie

AU - Mohammed-Brahim, Tayeb

PY - 2012/10/31

Y1 - 2012/10/31

N2 - We present the study of the dynamic response of silicon-based thin-film transistors under the voltage change, focusing on the time necessary to form the channel. Every detail of the current response-time curve is discussed by analyzing the intrinsic capacitances of thin-film transistors in on and off state and in linear and saturation mode. The method used in this work allows the visualization of the beginning of the channel conduction and the end of the channel formation process. We show the dependence of the channel creation time on geometrical parameters, applied voltage, material and structure. For this purpose, we use experimental results of the dynamic measurement and 2D finite elements simulation.

AB - We present the study of the dynamic response of silicon-based thin-film transistors under the voltage change, focusing on the time necessary to form the channel. Every detail of the current response-time curve is discussed by analyzing the intrinsic capacitances of thin-film transistors in on and off state and in linear and saturation mode. The method used in this work allows the visualization of the beginning of the channel conduction and the end of the channel formation process. We show the dependence of the channel creation time on geometrical parameters, applied voltage, material and structure. For this purpose, we use experimental results of the dynamic measurement and 2D finite elements simulation.

M3 - Conference contribution

AN - SCOPUS:84867909650

SN - 9781467303996

T3 - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

SP - 325

EP - 328

BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

T2 - 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Y2 - 4 July 2012 through 6 July 2012

ER -

Jin JW, Vanel JC, Daineka D, Bonnassieux Y, Janfaoui S, Kandoussi K et al. Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors. Dans Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 325-328. 6294917. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors

Résumé

Série de publications

Une conférence

Empreinte digitale

Contient cette citation