Effect of the Spatial Gain and Intensity Variations on a Two-Section Fabry-Perot Semiconductor Laser: An Analytical Study

Bruno J. Thedrez; Chi H. Lee

doi:10.1109/3.206570

Effect of the Spatial Gain and Intensity Variations on a Two-Section Fabry-Perot Semiconductor Laser: An Analytical Study

Bruno J. Thedrez
, Chi H. Lee

University of Maryland

Résultats de recherche: Contribution à un journal › Commentaire/débat

Résumé

An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. Models with no spatial dependence are also discussed. The validity of the model extends to any homogeneously broadened laser.

langue originale	Anglais
Pages (de - à)	864-876
Nombre de pages	13
journal	IEEE Journal of Quantum Electronics
Volume	29
Numéro de publication	3
Les DOIs	https://doi.org/10.1109/3.206570
état	Publié - 1 janv. 1993
Modification externe	Oui

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10.1109/3.206570

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title = "Effect of the Spatial Gain and Intensity Variations on a Two-Section Fabry-Perot Semiconductor Laser: An Analytical Study",

abstract = "An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. Models with no spatial dependence are also discussed. The validity of the model extends to any homogeneously broadened laser.",

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PY - 1993/1/1

Y1 - 1993/1/1

N2 - An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. Models with no spatial dependence are also discussed. The validity of the model extends to any homogeneously broadened laser.

AB - An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. Models with no spatial dependence are also discussed. The validity of the model extends to any homogeneously broadened laser.

UR - https://www.scopus.com/pages/publications/0027557591

U2 - 10.1109/3.206570

DO - 10.1109/3.206570

M3 - Comment/debate

AN - SCOPUS:0027557591

SN - 0018-9197

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EP - 876

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 3

ER -

Effect of the Spatial Gain and Intensity Variations on a Two-Section Fabry-Perot Semiconductor Laser: An Analytical Study

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