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Effect of wettability on the agglomeration of silicon nanowire arrays fabricated by metal-assisted chemical etching

  • Nanyang Technological University
  • Research Techno Plaza
  • Institut polytechnique de Paris

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

The effect of wettability on the undesirable bundling of silicon nanowire (SiNW) arrays fabricated by metal-assisted chemical etching (MACE) method is investigated. This paper reports a simple and low-cost approach to achieve dense SiNW arrays with excellent lateral separation. A hydrophilic pretreatment on the initial wafer substrate prior to the etching procedure, followed by a hydrophobic post-treatment of the fabricated SiNWs, allows the fabrication of large and dense arrays of SiNWs with no agglomeration. These results are discussed within the framework of the detailed balance of forces acting on the nanowires.

langue originaleAnglais
Pages (de - à)10290-10298
Nombre de pages9
journalLangmuir
Volume30
Numéro de publication34
Les DOIs
étatPublié - 2 sept. 2014

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