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Effective module level encapsulation of CIGS solar cells with Al2O3 thin film grown by atomic layer deposition

  • Shan Ting Zhang
  • , Maxim Guc
  • , Oliver Salomon
  • , Roland Wuerz
  • , Victor Izquierdo-Roca
  • , Alejandro Pérez-Rodríguez
  • , Friedrich Kessler
  • , Wolfram Hempel
  • , Thibaud Hildebrandt
  • , Nathanaelle Schneider
  • Institut Photovoltaïque d'Ile-de-France
  • CNRS
  • Catalonia Institute for Energy Research (IREC)
  • Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg
  • LENS-MIND-IN2UB
  • University of Barcelona

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

19 Citations (Scopus)

Résumé

An effective encapsulation solution for flexible CIGS is urgently needed to ensure a competitive market entry of the technology. In this work, we demonstrate the feasibility to effectively encapsulate module-level (10 × 10 cm2) CIGS/glass solar cells by employing a thin Al2O3 barrier layer grown by atomic layer deposition (ALD). As determined by a direct methodology, 10 nm ALD-Al2O3 is proved to be sufficient in preventing electrical degradation of the Al:ZnO (AZO) window layer upon exposure to damp heat test (DHT) and equally effective to encapsulate 10 × 10 cm2 CIGS/glass mini-modules by efficient blockage of moisture ingress. CIGS mini-modules encapsulated by ALD-Al2O3 barrier layer retain an average of 80% and 72% of initial efficiency after 1000 and 2000 h of DHT, respectively. Whereas unencapsulated modules drop to an average of 67% (1000 h DHT) and 22% (2000 h DHT) of initial efficiency. Thanks to the presence of ALD-Al2O3 barrier layer, less electrical degradation occurred in AZO window layer and P3 interconnection; also less shunting paths appeared – both led to a lower FF drop in encapsulated CIGS mini-modules. However, an issue of Na migration out of the CIGS layer is observed, which negatively impacts the module stability during DHT.

langue originaleAnglais
Numéro d'article110914
journalSolar Energy Materials and Solar Cells
Volume222
Les DOIs
étatPublié - 1 avr. 2021

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