Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors

F. Demanze; A. Yassar; D. Fichou

doi:10.1016/s0379-6779(98)01340-x

Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors

F. Demanze
, A. Yassar
, D. Fichou

CNRS

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

The synthesis of cyano end-capped sexithiophene is reported using the palladium-catalyzed coupling reaction via organotin intermediates. Schottky diode structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injection and rectification ratio strongly depend on the metal contact which is compatible with the electron affinity materials.

langue originale	Anglais
Pages (de - à)	620-621
Nombre de pages	2
journal	Synthetic Metals
Volume	101
Numéro de publication	1-3
Les DOIs	https://doi.org/10.1016/s0379-6779(98)01340-x
état	Publié - 1 janv. 1999
Evénement	Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) - Montpellier, France Durée: 12 juil. 1998 → 18 juil. 1998

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10.1016/s0379-6779(98)01340-x

Contient cette citation

@article{c4ec58fe8c66416eb4d9c1373ae67f3d,

title = "Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors",

abstract = "The synthesis of cyano end-capped sexithiophene is reported using the palladium-catalyzed coupling reaction via organotin intermediates. Schottky diode structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injection and rectification ratio strongly depend on the metal contact which is compatible with the electron affinity materials.",

author = "F. Demanze and A. Yassar and D. Fichou",

year = "1999",

month = jan,

day = "1",

doi = "10.1016/s0379-6779(98)01340-x",

language = "English",

volume = "101",

pages = "620--621",

journal = "Synthetic Metals",

issn = "0379-6779",

number = "1-3",

note = "Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98) ; Conference date: 12-07-1998 Through 18-07-1998",

}

TY - JOUR

T1 - Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors

AU - Demanze, F.

AU - Yassar, A.

AU - Fichou, D.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The synthesis of cyano end-capped sexithiophene is reported using the palladium-catalyzed coupling reaction via organotin intermediates. Schottky diode structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injection and rectification ratio strongly depend on the metal contact which is compatible with the electron affinity materials.

AB - The synthesis of cyano end-capped sexithiophene is reported using the palladium-catalyzed coupling reaction via organotin intermediates. Schottky diode structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injection and rectification ratio strongly depend on the metal contact which is compatible with the electron affinity materials.

U2 - 10.1016/s0379-6779(98)01340-x

DO - 10.1016/s0379-6779(98)01340-x

M3 - Conference article

AN - SCOPUS:0032590835

SN - 0379-6779

VL - 101

SP - 620

EP - 621

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

T2 - Proceedings of the 1998 International Conference on Science and Technology of Synthetic Metals (ICSM-98)

Y2 - 12 July 1998 through 18 July 1998

ER -

Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors

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