Electrical and structural properties of refractory metal Mo/poly(3-methylthiophene) Schottky barrier diodes

S. Tagmouti; A. Oueriagli; A. Outzourhit; M. Khaidar; El L. Ameziane; A. Yassar; H. K. Youssoufi; F. Garnier

doi:10.1016/s0379-6779(96)04692-9

Electrical and structural properties of refractory metal Mo/poly(3-methylthiophene) Schottky barrier diodes

S. Tagmouti
, A. Oueriagli
, A. Outzourhit
, M. Khaidar
, El L. Ameziane
, A. Yassar
, H. K. Youssoufi
, F. Garnier

Cadi Ayyad University
CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We present the results of a study of Mo/poly (3-methylthiophene)/Pt Schottky diodes. The Mo contact is sputtered onto electrochemically deposited poly(3-methylthiophene) (P3MT). Grazing incidence X-ray diffraction (GIXD) analysis shows that P3MT is amorphous. X-ray photoelectron spectroscopy (XPS) studies reveal that the Mo/P3MT interface is extremely diffuse with a great Mo penetration in the P3MT layer. However, no chemical reaction is observed. The rectification ratio of these devices at ±1 V is 620. The capacitance-frequency measurements show that the capacitance is frequency dependent. This behavior is explained on the basis of the amorphous nature of the polymer. The value of the density of states near the Fermi level N₀ deduced from the capacitance measurements at low frequencies is 1.2 × 10¹⁷ cm^-3eV^-1.

langue originale	Anglais
Pages (de - à)	109-113
Nombre de pages	5
journal	Synthetic Metals
Volume	87
Numéro de publication	2
Les DOIs	https://doi.org/10.1016/s0379-6779(96)04692-9
état	Publié - 31 mars 1997

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10.1016/s0379-6779(96)04692-9

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@article{5e8ed353ebef466ca7b4b434378c2bfc,

title = "Electrical and structural properties of refractory metal Mo/poly(3-methylthiophene) Schottky barrier diodes",

abstract = "We present the results of a study of Mo/poly (3-methylthiophene)/Pt Schottky diodes. The Mo contact is sputtered onto electrochemically deposited poly(3-methylthiophene) (P3MT). Grazing incidence X-ray diffraction (GIXD) analysis shows that P3MT is amorphous. X-ray photoelectron spectroscopy (XPS) studies reveal that the Mo/P3MT interface is extremely diffuse with a great Mo penetration in the P3MT layer. However, no chemical reaction is observed. The rectification ratio of these devices at ±1 V is 620. The capacitance-frequency measurements show that the capacitance is frequency dependent. This behavior is explained on the basis of the amorphous nature of the polymer. The value of the density of states near the Fermi level N0 deduced from the capacitance measurements at low frequencies is 1.2 × 1017 cm-3eV-1.",

keywords = "Electrodeposition, Poly(3-methylthiophene), Schottky barrier",

author = "S. Tagmouti and A. Oueriagli and A. Outzourhit and M. Khaidar and Ameziane, \{El L.\} and A. Yassar and Youssoufi, \{H. K.\} and F. Garnier",

year = "1997",

month = mar,

day = "31",

doi = "10.1016/s0379-6779(96)04692-9",

language = "English",

volume = "87",

pages = "109--113",

journal = "Synthetic Metals",

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TY - JOUR

T1 - Electrical and structural properties of refractory metal Mo/poly(3-methylthiophene) Schottky barrier diodes

AU - Tagmouti, S.

AU - Oueriagli, A.

AU - Outzourhit, A.

AU - Khaidar, M.

AU - Ameziane, El L.

AU - Yassar, A.

AU - Youssoufi, H. K.

AU - Garnier, F.

PY - 1997/3/31

Y1 - 1997/3/31

N2 - We present the results of a study of Mo/poly (3-methylthiophene)/Pt Schottky diodes. The Mo contact is sputtered onto electrochemically deposited poly(3-methylthiophene) (P3MT). Grazing incidence X-ray diffraction (GIXD) analysis shows that P3MT is amorphous. X-ray photoelectron spectroscopy (XPS) studies reveal that the Mo/P3MT interface is extremely diffuse with a great Mo penetration in the P3MT layer. However, no chemical reaction is observed. The rectification ratio of these devices at ±1 V is 620. The capacitance-frequency measurements show that the capacitance is frequency dependent. This behavior is explained on the basis of the amorphous nature of the polymer. The value of the density of states near the Fermi level N0 deduced from the capacitance measurements at low frequencies is 1.2 × 1017 cm-3eV-1.

AB - We present the results of a study of Mo/poly (3-methylthiophene)/Pt Schottky diodes. The Mo contact is sputtered onto electrochemically deposited poly(3-methylthiophene) (P3MT). Grazing incidence X-ray diffraction (GIXD) analysis shows that P3MT is amorphous. X-ray photoelectron spectroscopy (XPS) studies reveal that the Mo/P3MT interface is extremely diffuse with a great Mo penetration in the P3MT layer. However, no chemical reaction is observed. The rectification ratio of these devices at ±1 V is 620. The capacitance-frequency measurements show that the capacitance is frequency dependent. This behavior is explained on the basis of the amorphous nature of the polymer. The value of the density of states near the Fermi level N0 deduced from the capacitance measurements at low frequencies is 1.2 × 1017 cm-3eV-1.

KW - Electrodeposition

KW - Poly(3-methylthiophene)

KW - Schottky barrier

U2 - 10.1016/s0379-6779(96)04692-9

DO - 10.1016/s0379-6779(96)04692-9

M3 - Article

AN - SCOPUS:0031098210

SN - 0379-6779

VL - 87

SP - 109

EP - 113

JO - Synthetic Metals

JF - Synthetic Metals

IS - 2

ER -

Electrical and structural properties of refractory metal Mo/poly(3-methylthiophene) Schottky barrier diodes

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